초록 ▼

A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound re

A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1.sub.x Ed.sub.y, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.

대표청구항 ▼

[ What we claim is:] [1.] A method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of:a) providing a substrate of a selected material;b) selecting an ion compound including one or more atoms of a dopa

[ What we claim is:] [1.] A method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of:a) providing a substrate of a selected material;b) selecting an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in the material of the substrate, where in the one or more complementary elements are one ore more different elements selected from the group of elements consisting of silicon, germanium, tin, and lead; andc) implanting the selected ion compound into the substrate to form a doped region where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.