초록 ▼

Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that rad

Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.

대표청구항 ▼

[ It is claimed:] [1.] A method for determining the temperature of a semiconductor wafer comprising the steps of:heating said wafer with a modulated heat source such that the temperature of at least one error source is modulated with a selected modulation depth and the temperature of said wafer is s

[ It is claimed:] [1.] A method for determining the temperature of a semiconductor wafer comprising the steps of:heating said wafer with a modulated heat source such that the temperature of at least one error source is modulated with a selected modulation depth and the temperature of said wafer is substantially unmodulated;detecting the radiance of said wafer along with the radiance of said at least one error source; anddetermining the temperature of said wafer by calculating the contribution of said at least one error source based upon said modulation depth.