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Processing furnace for oxidizing objects 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05B-006/80
  • H01L-021/31
출원번호 US-0341052 (1994-11-16)
우선권정보 JP-0026084 (1994-01-28)
발명자 / 주소
  • Homma Kenji,JPX
  • Yomiya Koichi,JPX
출원인 / 주소
  • Tokyo Electron Tohoku Kabushiki Kaisha, JPX
대리인 / 주소
    Beveridge, DeGrandi, Weilacher & Young, L.L.P.
인용정보 피인용 횟수 : 45  인용 특허 : 7

초록

The present invention comprises a processing furnace for oxidizing object to be processed at a high temperature, pressure reducing means for evacuating the interior of the processing furnace, a burning apparatus disposed outside the processing furnace for burning hydrogen gas and oxygen gas to gener

대표청구항

[ What is claimed is:] [1.] A reduced pressure and wet oxidation system comprising:a processing furnace for oxidizing object to be processed at a high temperature and under reduced pressure;pressure reducing means for evacuating the interior of the processing furnace and reducing a pressure therein;

이 특허에 인용된 특허 (7)

  1. Shimizu Noriyoshi (Kawasaki JPX), Apparatus for fabricating semiconductor devices.
  2. Eschbach Rudolph J. B. (Amenia NY), Manufacturing system for low temperature chemical vapor deposition of high purity metals.
  3. Parker Sidney G. (Dallas TX) Wood Jerry (Lewisville TX) Turner Robert T. (Dallas TX) Fischer Craig A. (Plano TX), Method for depositing a Tio2 layer using a periodic and simultaneous tilting and rotating platform motion<.
  4. Nakao Ken (Sagamihara JPX) Maruchi Sadao (Hachioji JPX) Sakamoto Yoshio (Machida JPX), Oxidation metod.
  5. Takagi Mikio (Kawasaki JPX) Maeda Mamoru (Kawasaki JPX) Kamioka Hajime (Yokohama JPX), Process for high pressure oxidation of silicon.
  6. Toole Monte M. (Mill Valley CA) Champagne Robert B. (Mountain View CA), Silicon wafer steam oxidizing apparatus.
  7. McMenamin Joseph C. (Oceanside CA), Vapor mass flow control system.

이 특허를 인용한 특허 (45)

  1. Donohoe Kevin G., Apparatus and method for improving uniformity in batch processing of semiconductor wafers.
  2. Kashiwagi, Akihide; Kataoka, Toyotaka; Suzuki, Toshihiko, Apparatus for forming silicon oxide film and method of forming silicon oxide film.
  3. Yang, Cheol-Kyu; Lee, Seog-Min; Jang, Chul-Young; Son, Dong-Min; Ahn, Byung-Ho; Jeon, Du-Han; Joo, Yong-Kyu; Ha, Sang-Cheol, Batch type apparatus for manufacturing semiconductor devices.
  4. Nagata, Hiroshi; Shingaki, Yoshinori, Coating method and apparatus, a permanent magnet, and manufacturing method thereof.
  5. Weimer, Ronald A.; Hu, Yongjun Jeff; Pan, Pai Hung; Ratakonda, Deepa; Beck, James; Thakur, Randhir P. S., Forming a conductive structure in a semiconductor device.
  6. Yukimasa Saito JP; Hitoshi Murata JP; Hiroyuki Yamamoto JP, Heat treatment apparatus and cleaning method of the same.
  7. Saito, Yukimasa, Heat treatment device.
  8. Asano, Takanobu; Ishii, Katsutoshi; Yamamoto, Hiroyuki; Hoshi, George; Miura, Kazutoshi, Heat treatment system and method.
  9. Asano, Takanobu; Ishii, Katsutoshi; Yamamoto, Hiroyuki; Hoshi, George; Miura, Kazutoshi, Heat treatment system and method.
  10. Daggett,Joseph W.; Williams,Daniel J.; Kemp,Kevin G.; Cayton,Joseph W., Liquid coating device with barometric pressure compensation.
  11. Kouketsu, Masayuki; Itafuji, Hiroshi, Liquid vaporization system.
  12. Nakamura, Genji; Tada, Yoshihide; Imai, Masayuki; Suemura, Asami; Hishiya, Shingo, Method and apparatus for forming insulating film containing silicon oxy-nitride.
  13. Christian M. Gronet ; Peter A. Knoot ; Gary E. Miner ; Guangcai Xing ; David R. Lopes ; Satheesh Kuppurao, Method and apparatus for insitu vapor generation.
  14. Gronet Christian M. ; Knoot Peter A. ; Miner Gary E. ; Xing Guangcai ; Lopes David R. ; Kuppurao Satheesh, Method and apparatus for insitu vapor generation.
  15. Hargett, Jr., Wyatt P.; Thomas, James E., Method and apparatus for microwave assisted high throughput high pressure chemical synthesis.
  16. Hargett, Jr.,Wyatt P.; Thomas,James E., Method and apparatus for microwave assisted high throughput high pressure chemical synthesis.
  17. Achutharaman, Vedapuram S.; Chacin, Juan; Forstner, Hali, Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile.
  18. Tokai, Nobuo; Maeda, Yuji; Hashimoto, Masayuki, Method and system for forming film, semiconductor device and fabrication method thereof.
  19. Tanabe, Yoshikazu; Sakai, Satoshi; Natsuaki, Nobuyoshi, Method for fabricating semiconductor integrated circuit device.
  20. Tanabe,Yoshikazu; Sakai,Satoshi; Natsuaki,Nobuyoshi, Method for fabricating semiconductor integrated circuit device.
  21. Tanabe,Yoshikazu; Sakai,Satoshi; Natsuaki,Nobuyoshi, Method for fabricating semiconductor integrated circuit device.
  22. Chen B. F.,TWX ; Lin F. Y.,TWX ; Lin W. J.,TWX, Method for forming a gate oxide layer.
  23. Donohoe, Kevin G., Method for improving uniformity in batch processing of semiconductor wafers.
  24. Gronet Christian M. ; Knoot Peter A. ; Miner Gary E. ; Xing Guangcai ; Lopes David R. ; Kuppurao Satheesh, Method for insitu vapor generation for forming an oxide on a substrate.
  25. Jyh Wen Peng TW, Method for semiconductor wafer processing system.
  26. Ishii, Katsutoshi; Miura, Kazutoshi, Method of forming oxynitride film or the like and system for carrying out the same.
  27. Miner Gary E. ; Xing Guangcai ; Lopes David R. ; Kuppurao Sathees, Method of oxidizing a substrate in the presence of nitride and oxynitride films.
  28. Vaartstra,Brian A, Methods for forming phosphorus-and/or boron-containing silica layers on substrates.
  29. Thomas James Edward ; Hargett ; Jr. Wyatt Price ; King Edward Earl, Pressure sensing reaction vessel for microwave assisted chemistry.
  30. Hatano Tatsuo,JPX, Process-gas supply apparatus.
  31. Moriya, Shuji; Shindo, Toyohiko; Tamura, Noboru, Processing apparatus.
  32. Moffat William A., Rapid heating and cooling vacuum oven.
  33. Sato, Taketoshi; Tsuneda, Masayuki, Semiconductor device manufacturing method and substrate processing apparatus.
  34. Takahashi,Yutaka; Kato,Hitoshi; Ishii,Katsutoshi; Miura,Kazutoshi, Silicon dioxide film forming method.
  35. Hara, Daisuke; Itoh, Takeshi; Fukuda, Masanao; Yamaguchi, Takatomo; Hiramatsu, Hiroaki; Saido, Shuhei; Sasaki, Takafumi, Substrate processing apparatus.
  36. Okuda, Kazuyuki; Kagaya, Toru; Sakai, Masanori, Substrate processing apparatus.
  37. Shimahara Takashi,JPX ; Nakamura Naoto,JPX ; Sakamoto Ichiro,JPX ; Maeda Kiyohiko,JPX, Substrate processing apparatus and method.
  38. Shimahara, Takashi; Nakamura, Naoto; Sakamoto, Ichiro; Maeda, Kiyohiko, Substrate processing apparatus and method.
  39. Nakaiso, Naoharu; Maeda, Kiyohiko; Yamada, Masayuki, Substrate processing apparatus and method of manufacturing semiconductor device.
  40. Yuasa, Kazuhiro; Fukuda, Masanao; Sasaki, Takafumi; Megawa, Yasuhiro; Minami, Masayoshi, Substrate processing apparatus, method of processing substrate and method of manufacturing semiconductor device.
  41. Mun Seong Yeol,KRX, System for etching polysilicon in fabricating semiconductor device.
  42. Dudman, Miles, System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth.
  43. Cleaver Mark P. ; Wilson Gregory J. ; McHugh Paul R. ; Funk Larry J., Thermal processor and components thereof.
  44. Callaway, Martin A.; Adair, Robert D.; Murphy, Kenneth S.; Maniurski, Theodore J., Vapor deposition temperature control apparatus and method.
  45. Ohkase Wataru,JPX ; Aoki Kazutsugu,JPX ; Hasei Masaaki,JPX, Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures.

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