초록 ▼

A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin insulating film, i

A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin insulating film, it can have a large capacitance. By virtue of the structure in which the black matrix also serves as the auxiliary capacitor, it is not necessary to provide an electrode dedicated to the auxiliary capacitor, thereby preventing reduction in aperture ratio. Further, the black matrix can completely shield a source line and a gate line from light.

대표청구항 ▼

[ What is claimed is:] [6.] A display device comprising:a thin film transistor formed on a substrate, said thin film transistor having source, drain and channel regions and a gate electrode adjacent to said channel region with a gate insulating film therebetween;a gate line electrically connected to

[ What is claimed is:] [6.] A display device comprising:a thin film transistor formed on a substrate, said thin film transistor having source, drain and channel regions and a gate electrode adjacent to said channel region with a gate insulating film therebetween;a gate line electrically connected to said gate electrode and configured to extend in a first direction on a substrate;a first interlayer insulating film formed over said thin film transistor and said gate line;a source line formed on said first interlayer insulating film and electrically connected to the source region of said transistor through a first contact hole of said first interlayer insulating film wherein said source line extends in a second direction substantially orthogonal to said gate line to define a pixel region;a second interlayer insulating film formed on said first interlayer insulating film and said source line;a light shielding layer formed on said second interlayer insulating film to shield at least said source line and said gate line;a third interlayer insulating film formed on said second interlayer insulating film and said light shielding layer; anda pixel electrode formed on said third interlayer insulating film and electrically connected to said drain region of the transistor,wherein a part of said light shielding layer overlaps with a periphery of said pixel electrode with said third interlayer insulating film interposed therebetween to form a storage capacitor and said second interlayer insulating film provides a leveled upper surface for said pixel electrode.