초록 ▼

A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transist

A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.

대표청구항 ▼

[ What is claimed is:] [1.] A method to reduce mobile ion contamination in a semiconductor device during semiconductor processing, said method comprising the steps of:forming active field effect transistors in a starting substrate;forming a first insulating layer over said field effect transistors;f

[ What is claimed is:] [1.] A method to reduce mobile ion contamination in a semiconductor device during semiconductor processing, said method comprising the steps of:forming active field effect transistors in a starting substrate;forming a first insulating layer over said field effect transistors;forming a second insulating layer over said first insulating layer; andforming a single nitride layer, said single nitride layer being formed over either one of said first and second insulating layers by performing a single annealing step in a nitrogen containing gas ambient prior to exposing said first and second insulating layers to mobile ion impurities.