초록 ▼

The drive substrate and an opposed substrate are joined to each other through a gap in which a liquid crystal is held. Pixels electrodes are provided on the drive substrate in a matrix form and, an opposed electrode is formed on the entire surface of the opposed substrate. The drive substrate 1 has

The drive substrate and an opposed substrate are joined to each other through a gap in which a liquid crystal is held. Pixels electrodes are provided on the drive substrate in a matrix form and, an opposed electrode is formed on the entire surface of the opposed substrate. The drive substrate 1 has a plurality of thin film transistors each for switching one of the pixel electrodes, a first interlayer insulating film for covering the thin film transistors, interconnect electrodes patterned on the first interlayer insulating film and connected to the thin film transistors, a second interlayer insulating film for covering the interconnect electrodes and a black matrix patterned on the second interlayer insulating film and used for shielding the thin film transistors beneath the second interlayer insulating film. The black matrix is covered by a planerization layer and the pixel electrodes are patterned on the planerization layer. The pixel electrodes are connected to the interconnect electrodes through the black matrix 10 which is made up of a metal film. In a display device of the active matrix type, an on-chip black structure is thus obtained by providing a black matrix also referred to as a light-shielding layer on a drive substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A display device comprising:a first substrate having a plurality of thin film transistors formed thereon, a first interlayer insulating film for covering said thin film transistors;interconnect electrodes formed on said first interlayer insulating film and connected to sa

[ What is claimed is:] [1.] A display device comprising:a first substrate having a plurality of thin film transistors formed thereon, a first interlayer insulating film for covering said thin film transistors;interconnect electrodes formed on said first interlayer insulating film and connected to said thin film transistors;a second interlayer insulating film for covering said interconnect electrodes, anda first light-shielding layer formed on said second interlayer insulating film and used for shielding said film transistors beneath said second interlayer insulating film;a plurality of pixel electrodes formed above the first light-shielding layer;a second substrate joined to said first substrate through a predetermined gap and provided with facing electrodes; andan electro-optical material held in said gap wherein a planerization layer for covering said first light shielding layer is provided and said pixel electrodes are formed on said planarization layer.