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Exhaust system for film forming apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B01D-050/00
출원번호 US-0788702 (1997-01-24)
우선권정보 JP-0030059 (1996-01-24)
발명자 / 주소
  • Horiuchi Takashi,JPX
  • Kobayashi Sensho,JPX
  • Itoh Masahide,JPX
  • Gomi Hisashi,JPX
출원인 / 주소
  • Tokyo Electron Limited, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 20  인용 특허 : 16

초록

An exhaust system for a film forming apparatus including an exhaust pipe passage connected to an exhaust port of the film forming apparatus for forming a film on a object by using vaporized gas of an organic metal compound. The film forming apparatus includes a pressure transfer unit provided for th

대표청구항

[ We claim:] [1.] An exhaust system for a film forming apparatus comprising:an exhaust pipe passage connected to an exhaust port of said film forming apparatus for forming a film on a object by using vaporized gas of an organic metal compound;pressure transfer means provided for said exhaust pipe pa

이 특허에 인용된 특허 (16)

  1. Kitayama Masayasu (Kawasaki JPX) Sugimori Yoshiaki (Tokyo JPX) Ohta Schunich (Fujisawa JPX), Absorbent for treating gases containing the materials used for semiconductor products and process of treating such gases.
  2. Bartz David (Santa Clara CA) Kendall Robert M. (Sunnyvale CA) Moreno Frederick E. (Los Altos CA), Apparatus for combustive destruction of troublesome substances.
  3. Takahashi Ichirou (Kamakura JPX), Apparatus for separating and removing a dangerous substance from an exhaust gas.
  4. Li Yao-En (Buffalo Grove IL) Rizos John (Frankfort IL), Chemical purification for semiconductor processing by partial condensation.
  5. Okumura Katsuya (Kanagawa JPX) Kuriyama Fumio (Kanagawa JPX) Murai Yukio (Kanagawa JPX) Tsujimura Manabu (Kanagawa JPX) Sobukawa Hiroshi (Kanagawa JPX), Evacuation apparatus and evacuation method.
  6. Harada Hiroyuki (Tokyo JPX) Koinuma Tsutomu (Urawa JPX) Iwata Terufumi (Yokohama JPX) Nitta Michio (Tokyo JPX), Impurity scavenging system.
  7. Anderson Lawrence B. (Encinitas CA) Hammon Timothy E. (Cardiff CA) Frieler Cliff (Highland Park CA), Incinerator for complete oxidation of impurities in a gas stream.
  8. Sandhu Gurtej S. (Boise ID), LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby.
  9. Sandhu Gurtej S. (Boise ID) Buley Todd W. (Boise ID), Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of.
  10. Hieber Konrad (Bernau DEX) Stolz Manfred (Munich DEX) Wieczorek Claudia (Ottobrunn DEX), Method for the manufacture of metal silicide layers by means of reduced pressure gas phase deposition.
  11. Fabian Werner (Berlin DEX) Roehle Helmut (Berlin DEX) Wolfram Peter (Berlin DEX), Method of removing noxious substances from gases.
  12. Someya Kazuo (Kudamatsu JPX) Kita Osamu (Kudamatsu JPX) Tomomura Masaomi (Hitachi JPX), Process and apparatus for recovering inert gas.
  13. Hardwick, Steven; McManus, James V., Process for sorption of hazardous waste products from exhaust gas streams.
  14. Schumacher John C. (Carlsbad CA) McMenamin Joseph C. (Oceanside CA) Anderson Lawrence B. (Encinitas CA) Cowles Harold R. (Chandler AZ) Lord Stephen M. (Encinitas CA), Removal and destruction of volatile organic compounds from gas streams.
  15. Takahashi Hironari (Itami JPX), Semiconductor device manufacturing apparatus and cleaning method for the apparatus.
  16. Coleman Larry M. (Tonawanda NY) Tambo William (Chelmsford MA), Waste treatment in silicon production operations.

이 특허를 인용한 특허 (20)

  1. Lin Wei-Farn,TWX ; Hung Cheng-Chang,TWX, Ammonium chloride vaporizer cold trap.
  2. Meng, Xianping; Chen, Bingfu; Hu, Licheng, Apparatus and method for collecting powder generated during film deposition process.
  3. Choi Won-sung,KRX ; Oh Kyu-un,KRX, Apparatus for depositing thin films on semiconductor wafers.
  4. DeSantis Gennaro Nicholas, Continuous effluent gas scrubber system and method.
  5. Hasegawa, Toshio, Exhaust apparatus for process apparatus and method of removing impurity gas.
  6. Hasegawa,Toshio, Exhaust apparatus for process apparatus and method of removing impurity gas.
  7. Hashizume, Junichiro; Ueda, Shigenori; Okamura, Ryuji, Exhaust process and film depositing method using the exhaust process.
  8. Hashizume Junichiro,JPX ; Ueda Shigenori,JPX ; Okamura Ryuji,JPX, Exhaust system and vacuum processing apparatus.
  9. Rodriguez Benjamin G. ; Gonzales Augusto J. ; Fritz ; Jr. Robert E. ; Meyers Freddy, Exhaust system for a semiconductor etcher that utilizes corrosive gas.
  10. Near Daniel L. ; Warnes Bruce M. ; Winters Stephen M., Method of reacting excess CVD gas reactant.
  11. Ueda Tetsuzo ; Solomon Glenn S. ; Miller David J., Particle trap apparatus and methods.
  12. Yamasaki, Hideaki; Kawano, Yumiko; Kubo, Kenichi; Arima, Susumu, Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system.
  13. Shiralagi Kumar, Selective metallization/deposition for semiconductor devices.
  14. Lim Yu-il,KRX, Systems and methods for removing residue from process gases exhausted from microelectronic device fabrication processes.
  15. Hayashi Kazuichi,JPX ; Fujikawa Yuichiro,JPX, Trap apparatus.
  16. Hayashi Kazuichi,JPX ; Fujikawa Yuichiro,JPX, Trap apparatus.
  17. Nomura, Norihiko, Trap apparatus.
  18. Norihiko Nomura JP, Trap apparatus.
  19. Kobayashi, Hiroyuki; Maeda, Kenji; Izawa, Masaru; Nawata, Makoto, Vacuum processing apparatus.
  20. Suzuki, Kunihiko; Arai, Hideki; Hirata, Hironobu, Vapor phase deposition apparatus and vapor phase deposition method.
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