초록 ▼

A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate formed on a first electrode, a first cladding layer of a first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of a se

A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate formed on a first electrode, a first cladding layer of a first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of a second conductivity type formed on the active layer, a window layer of the second conductivity type formed on the second cladding layer, wherein the electrical resistivity of the window layer is less than the electrical resistivity of the second cladding layer, a contact layer of the second conductivity type formed on the window layer for providing ohmic contact, a conductive transparent oxide layer formed on the contact layer, and a current blocking region formed in the LED. The current blocking region is approximately aligned with a second electrode, and can be the contact layer having a hollow portion therein, an insulating region formed on the contact layer, an ion implanted region in the contact layer and the window layer, or a diffused region in the contact layer and the window layer.

대표청구항 ▼

[ What is claimed is:] [1.] A light emitting diode comprising:a substrate formed on a first electrode;a first cladding layer of a first conductivity type formed on said substrate;an active layer formed on said first cladding layer;a second cladding layer of a second conductivity type formed on said

[ What is claimed is:] [1.] A light emitting diode comprising:a substrate formed on a first electrode;a first cladding layer of a first conductivity type formed on said substrate;an active layer formed on said first cladding layer;a second cladding layer of a second conductivity type formed on said active layer;a window layer of the second conductivity type formed on said second cladding layer, electrical resistivity of said window layer being less than electrical resistivity of said second cladding layer;a contact layer of the second conductivity type formed on said window layer for providing ohmic contact, said contact layer having a hollow portion extending from the top surface of said contact layer to the bottom surface of said contact layer, thereby exposing said window layer;a conductive transparent oxide layer formed on said contact layer, and filled the hollow portion in said contact layer, electrical resistivity of said conductive transparent oxide layer being less than electrical resistivity of said window layer and said contact layer; anda second electrode formed on a portion of said conductive transparent oxide layer, said second electrode being approximately aligned with the hollow portion in said contact layer.