초록 ▼

A method of automatically polishing a semiconductor wafer having a substrate and a surface film. A wafer mounting device, which may include a vacuum chuck, holds the semiconductor wafer without requiring that the wafer have a central aperture. The mounting device and wafer are moved with an orbit-wi

A method of automatically polishing a semiconductor wafer having a substrate and a surface film. A wafer mounting device, which may include a vacuum chuck, holds the semiconductor wafer without requiring that the wafer have a central aperture. The mounting device and wafer are moved with an orbit-within-an-orbit motion while a tape transport mechanism applies an abrasive polishing tape to the surface film of the moving wafer to polish one surface of the wafer to a flatness of less than two microns. The polishing tape passes arcuately around a roller and passes between the roller and the surface film and contacts the surface film in a line running across the width of the tape. The system determines the thickness of the wafer surface film during the polishing process with a real time measurement device such as an effipsometer, or by determining a work-performed factor and calculating an estimated film thickness from the work-performed factor. Finally, the system automatically controls the polishing process to stop polishing the semiconductor wafer when the wafer surface film achieves a predefined planarization.

대표청구항 ▼

[ What is claimed is:] [1.] A method of automatically polishing a semiconductor wafer having a substrate and a surface film, said method comprising the steps of:holding said semiconductor wafer without requiring that said wafer have a central aperture;polishing one surface of said wafer to a microsc

[ What is claimed is:] [1.] A method of automatically polishing a semiconductor wafer having a substrate and a surface film, said method comprising the steps of:holding said semiconductor wafer without requiring that said wafer have a central aperture;polishing one surface of said wafer to a microscopically smooth surface by applying a polishing tape to the surface film of the wafer with a tape transport mechanism, said tape contacting said surface film in a line;determining the thickness of said surface film in real time while polishing said wafer; andautomatically controlling said polishing step with a control computer, said automatic controlling step including the steps of:providing measurements of said surface film thickness to said control computer in real time; andstopping said polishing step when the thickness of said surface film, averaged over the entire surface of said wafer, achieves a predefined value.