초록 ▼

In a method of forming a pattern, a photo-mask including a desired pattern is provided. A photo-sensitive resin film is spin-coated on a semiconductor substrate. Subsequently, the surface of the photo-sensitive resin film is changed to have a resistivity against a development solution. Next, light i

In a method of forming a pattern, a photo-mask including a desired pattern is provided. A photo-sensitive resin film is spin-coated on a semiconductor substrate. Subsequently, the surface of the photo-sensitive resin film is changed to have a resistivity against a development solution. Next, light is illuminated to transmit the photo-mask. As a result, the resistivity of only the surface portion of the photo-sensitive resin film corresponding to the desired pattern is decreased based on the property of photo-sensitive resin film by the light having transmitted the photo-mask. Last, the photo-sensitive layer is developed with the development solution.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a pattern, comprising steps of:providing a photo-mask including said pattern;coating a photo-sensitive resin film on a semiconductor substrate;forming a surface of said photo-sensitive resin film to have a resistivity against a development solution;ill

[ What is claimed is:] [1.] A method of forming a pattern, comprising steps of:providing a photo-mask including said pattern;coating a photo-sensitive resin film on a semiconductor substrate;forming a surface of said photo-sensitive resin film to have a resistivity against a development solution;illuminating said pattern on said surface of said photo-sensitive resin film through said photo-mask, said step of illuminating decreasing said resistivity of a pattern portion of said surface of said photo-sensitive resin film subjected to said illumination; andcontacting said photo-sensitive resin film with a development solution,wherein said photo-mask comprises a phase-shift photo-mask and includes a transparent region and a semi-transparent region positioned on a transparent substrate, wherein a first light component transmitted through said transparent region has a phase different than that of a second light component transmitted through said semi-transparent region,wherein said step of illuminating includes illuminating said photo-sensitive resin film N times, wherein N is an integer greater than one, and, during each of said N illuminations, changing a focus position in a direction of a film thickness of said photo-sensitive resin film, andwherein each of said N illuminations is controlled to be 1/N of an amount of light for transferring said pattern to said photo-sensitive resin film. [5.] A method of forming a pattern comprising steps of:providing a photo-mask including said pattern;coating a photo-sensitive resin film on a semiconductor substrate;forming a surface of said photo-sensitive resin film to have a resistivity against a development solution;illuminating said pattern on said surface of said photo-sensitive resin film through said photo-mask, said step of illuminating decreasing said resistivity of a pattern portion of said surface of said photo-sensitive resin film subjected to said illumination; andcontacting said photo-sensitive resin film with a development solution,wherein said photo-mask comprises a phase-shift photo-mask and includes a transparent region and a semi-transparent region positioned on a transparent substrate, wherein a first light component transmitted through said transparent region has a phase different than that of a second light component transmitted through said semi-transparent region. [6.] A method of forming a pattern comprising steps of:providing a photo-mask including said pattern;coating a photo-sensitive resin film on a semiconductor substrate;forming a surface of said photo-sensitive resin film to have a resistivity against a development solution;illuminating said pattern on said surface of said photo-sensitive resin film through said photo-mask, said step of illuminating decreasing said resistivity of a pattern portion of said surface of said photo-sensitive resin film subjected to said illumination; andcontacting said photo-sensitive resin film with a develop rent solution,wherein said photo-mask includes a light shielding region and a transparent region positioned on a transparent substrate,wherein said transparent region includes at least one first pattern and at least one second pattern,wherein said first pattern has a size of W1.gtoreq.0.5.times..lambda./NA, where W1 comprises a first pattern size on an imaging plane, .lambda. comprises a wavelength of said light, and NA comprises a numerical aperture,wherein said second pattern has a size of W2.ltoreq.0.5.times..lambda./NA, where W2 comprises a second pattern size on said imaging plane, andwherein a first light component transmitted through said first pattern has a phase different than that of a second light component transmitted through said second pattern.