초록 ▼

A method and structure for controlling the threshold voltage of a MOSFET is provided. The method compensates for the edge effect associated with prior art halo implants by providing an edge threshold voltage implant (the VT implant) which passes impurities through dielectric spacers, through the und

A method and structure for controlling the threshold voltage of a MOSFET is provided. The method compensates for the edge effect associated with prior art halo implants by providing an edge threshold voltage implant (the VT implant) which passes impurities through dielectric spacers, through the underlying source/drain regions and into the edges of the halo regions which lie in the channel. The VT implant reduces junction capacitance and does not degrade punchthrough voltage.

대표청구항 ▼

[ We claim:] [1.] A semiconductor device having a substrate with a gate structure formed over said substrate, said gate structure having a first side connected to a first spacer, said semiconductor device comprising:a first source/drain region and a channel region in said substrate, said channel reg

[ We claim:] [1.] A semiconductor device having a substrate with a gate structure formed over said substrate, said gate structure having a first side connected to a first spacer, said semiconductor device comprising:a first source/drain region and a channel region in said substrate, said channel region being directly laterally adjacent said first source/drain region and underlying said gate structure; anda first halo region in said substrate, said first halo region comprising a first halo portion, a second halo portion and a third halo portion, said first halo portion underlying said first spacer and having a first dopant concentration, said second halo portion being in said channel region and having a second dopant concentration less than said first dopant concentration, said third halo portion being laterally separate from said gate structure and laterally adjacent to said first spacer and having a third dopant concentration less than said first dopant concentration.