|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||327/512 ; 307/651|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 20 인용 특허 : 6|
A temperature detection circuit using a threshold voltage of a MOSFET with a further improved detection characteristic. The circuit has first and second lateral MOSFETs formed in a well region of a conductivity type which is formed on a surface of a semiconductor region of an opposite conductivity type, a first power source which drives the first lateral MOSFET at an operation point where a temperature has influence on a characteristic between a gate-source voltage and a drain current characteristic thereof, a second power source which drives the second ...
[ What is claimed is:] [5.] A temperature detection circuit, comprising: