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A temperature detection circuit using a threshold voltage of a MOSFET with a further improved detection characteristic. The circuit has first and second lateral MOSFETs formed in a well region of a conductivity type which is formed on a surface of a semiconductor region of an opposite conductivity t

A temperature detection circuit using a threshold voltage of a MOSFET with a further improved detection characteristic. The circuit has first and second lateral MOSFETs formed in a well region of a conductivity type which is formed on a surface of a semiconductor region of an opposite conductivity type, a first power source which drives the first lateral MOSFET at an operation point where a temperature has influence on a characteristic between a gate-source voltage and a drain current characteristic thereof, a second power source which drives the second lateral MOSFET at an operation point where the temperature has no influence on a characteristic between a gate-source voltage and a drain current characteristic thereof, and a comparator which compares a difference between outputs from the first and second lateral MOSFETs with a predetermined set value to detect the temperature.

대표청구항

[ What is claimed is:] [5.] A temperature detection circuit, comprising:

[ What is claimed is:] [5.] A temperature detection circuit, comprising: