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Method for silicon deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/24
출원번호 US-0481801 (1995-06-07)
발명자 / 주소
  • Lord Stephen M.
  • Milligan Robert J.
출원인 / 주소
  • Advanced Silicon Materials, Inc.
대리인 / 주소
    Klarquist Sparkman Campbell Leigh & Whinston, LLP
인용정보 피인용 횟수 : 66  인용 특허 : 0

초록

Silicon beads are produced by chemical vapor deposition (CVD) on seed particles generated internal to a CVD reactor. The reactor has multiple zones, including an inlet zone where beads are maintained in a submerged spouted bed and an upper zone where beads are maintained in a bubbling fluidized bed.

대표청구항

[ We claim:] [1.] A process for the deposition of silicon on particles that are located inside a vessel, the process comprising:providing a reactor having a vessel, which vessel has a wall which defines a chamber having at least two zones including (a) an inlet zone and (b) an upper zone that commun

이 특허를 인용한 특허 (66)

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  2. Lord, Stephen Michael, Apparatus and process for hydrogenation of a silicon tetrahalide and silicon to the trihalosilane.
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