초록 ▼

A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of cur

A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma. Preferably, the ratio of the width to the height of the chamber is 10:1 or larger so that the chamber includes a large area planar surface adjacent the plasma sheath and adjacent to which a large area substrate or a plurality of substrates is arranged, whereby large area treatment, such as diamond deposition, can be performed.

대표청구항 ▼

[ What is claimed as new and desired to be secured by Letters Patent of the United States is:] [1.] A plasma treatment apparatus comprising:a chamber having a longitudinal axis and sidewalls that surround the longitudinal axis, at least one sidewall being an extensive planar wall that is parallel to

[ What is claimed as new and desired to be secured by Letters Patent of the United States is:] [1.] A plasma treatment apparatus comprising:a chamber having a longitudinal axis and sidewalls that surround the longitudinal axis, at least one sidewall being an extensive planar wall that is parallel to the longitudinal axis;means for providing a gas into the chamber;an axially extending array of current-carrying conductor loops that encircle the chamber, are substantially transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber; anda power supply connected to the conductor array and adapted to provide high frequency current in the conductor loops to magnetically induce ionization of a gaseous material in the chamber.