초록 ▼

A Czochralski process furnace component is disclosed. The component comprises a high purity, semiconductor standard composite including a carbon fiber reinforced carbon matrix having a level of metal impurity below the detection limit of inductively coupled plasma spectroscopy. A process for produci

A Czochralski process furnace component is disclosed. The component comprises a high purity, semiconductor standard composite including a carbon fiber reinforced carbon matrix having a level of metal impurity below the detection limit of inductively coupled plasma spectroscopy. A process for producing the components includes heat treatment of the carbon fiber and the components.

대표청구항 ▼

[ I claim:] [1.] A semiconductor crystal growing apparatus comprising at least one high purity, carbon/carbon composite component, said high purity composite including a carbon fiber reinforced carbon matrix having a level of metal impurity below the detection limit of inductively coupled plasma spe

[ I claim:] [1.] A semiconductor crystal growing apparatus comprising at least one high purity, carbon/carbon composite component, said high purity composite including a carbon fiber reinforced carbon matrix having a level of metal impurity below the detection limit of inductively coupled plasma spectroscopy for the metals Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr and Zn;wherein the carbon fiber is selected from the group consisting of fiber, cloth, woven fabric, yarn and tape;the high purity composite having an ultimate tensile strength of about 25 to about 100 ksi and a tensile modulus of about 3 to about 30 msi, and having a flexural strength of about 15 to about 60 ksi and a compressive strength of about 10 to about 50 ksi.