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특허 상세정보

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Chemical vapor deposition apparatus

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23C-016/00   
미국특허분류(USC) 118/723MP ; 118/722 ; 118/723IR
출원번호 US-0479857 (1995-06-07)
발명자 / 주소
  • Mikoshiba Nobuo,JPX
  • Ohmi Tadahiro,JPX
  • Tsubouchi Kazuo,JPX
  • Masu Kazuya,JPX
  • Suzuki Nobumasa,JPX
출원인 / 주소
  • Canon Kabushiki Kaisha, JPX
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 9  인용 특허 : 29
초록

A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

대표
청구항
▼

[ We claim:] [1.] An apparatus for forming a chemically vapor deposited film comprising:a first gas phase compound supplying means for supplying onto a substrate which is set in a reaction vessel a first gas phase compound comprising constituent atoms of the deposited film and provided from a source capable of delivering a compound selected from the group consisting of metal carbonyl compounds, alkyl-metal compounds and metal halides;an excitation energy supplying means for supplying an excitation energy to at least said first gas phase compound to form ...

인용문헌 (29)

  1. Davis Cecil J. (Greenville TX) Spencer John E. (Plano TX) Johnson Randall E. (Carrollton TX) Jucha Rhett B. (Celeste TX) Brown Frederick W. (Tarrant TX) Kohan Stanford P. (Garland TX), Automated single slice cassette load lock plasma reactor.
  2. Davis Cecil J. (Greenville TX) Spencer John E. (Plano TX) Hockersmith Dan T. (Garland TX) Hildenbrand Randall C. (Richardson TX) Brown Frederick W. (Colleyville TX) Kohan Stanford P. (Garland TX), Automated single slice powered load lock plasma reactor.
  3. Cox Herbert M. (Berkeley Heights NJ), Deposition technique.
  4. Sekine Makoto (Yokohama JPX) Okano Haruo (Tokyo JPX) Horiike Yasuhiro (Tokyo JPX), Dry-etching method and apparatus therefor.
  5. Kawamura Takao (17-11 ; Takakura-dai 1-chome Sakai-shi ; Osaka JPX) Nakayama Yoshikazu (Osaka JPX) Akiyama Koji (Osaka JPX), Electrophotographic sensitive member having a fluorinated amorphous silicon photoconductive layer.
  6. Thompson Stephen W. (Rosenburg TX) Keen Ralph (Missouri City TX), Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure.
  7. Hirooka Masaaki (Toride JPX) Ishihara Shunichi (Ebina JPX) Hanna Junichi (Yokohama JPX) Shimizu Isamu (Yokohama JPX), Formation of deposited film.
  8. Kemlage Bernard M. (Kingston NY), Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reac.
  9. Deutsch Thomas F. (Cambridge MA) Ehrlich Daniel J. (Arlington MA) Osgood Richard M. (Winchester MA), Method and apparatus for depositing a material on a surface.
  10. Suzuki Keizo (Arlington MA) Ninomiya Ken (Nakano JPX) Nishimatsu Shigeru (Kokubunji JPX) Okudaira Sadayuki (Ohme JPX) Okada Osami (Chofu JPX), Method and apparatus for surface treatment by plasma.
  11. Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI), Method for optimizing photoresponsive amorphous alloys and devices.
  12. Adams Arthur C. (Berkeley Heights NJ) Aspnes David E. (Watchung NJ) Bagley Brian G. (Watchung NJ), Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique.
  13. Tada Keiji (Kudamatsu JPX) Fujii Takashi (Kudamatsu JPX) Marumoto Gen (Kudamatsu JPX) Jyouo Kazuhiro (Kudamatsu JPX) Fujisawa Takahiro (Yanai JPX), Method of and apparatus for detecting an end point of plasma treatment.
  14. Gordon Roy G. (22 Highland St. Cambridge MA 02138), Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide.
  15. Gordon Roy G. (22 Highland St. Cambridge MA 02138), Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide.
  16. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of depositing semiconductor films by free radical generation.
  17. Ueno Tsuyoshi (Fujisawa JPX) Suzuki Katsumi (Tokyo JPX) Hirose Masataka (Hiroshima JPX), Method of forming amorphous silicon film.
  18. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of making amorphous semiconductor alloys and devices using microwave energy.
  19. John Puthenveetil K. (214 Wychwood Park London ; Ontario CAX N6G 1S3) Tong Bok Y. (2 Milford Crescent London ; Ontario CAX N5X 1A8) Wong Sau K. (673 Cranbrook Rd. London ; Ontario CAX N6K 1W8) Chik K, Method of making highly stable modified amorphous silicon and germanium films.
  20. Lee Henry (Somerville NJ) deNeufville John P. (Mendham NJ) Ovshinsky Stanford R. (Bloomfield Hills MI), Methods of using selective optical excitation in deposition processes and the detection of new compositions.
  21. Chen Lee (Poughkeepsie NY) Khoury Henri A. (Yorktown Heights NY) Seymour Harlan R. (Morton Grove IL), Optical emission spectroscopy end point detection in plasma etching.
  22. Kleinknecht Hans P. (Bergdietikon CHX) Kane James (Zumikon CHX), Optically monitoring the thickness of a depositing layer.
  23. Shuskus Alexander J. (West Hartford CT) Cowher Melvyn E. (East Brookfield MA), Plasma enhanced deposition of semiconductors.
  24. Peters John W. (Malibu CA), Process for depositing a conductive oxide layer.
  25. Fukuda Tadaji (Kawasaki JPX) Nishigaki Yuji (Tokyo JPX), Process for forming deposition film.
  26. Hirooka, Masaaki, Process for producing silicon-containing deposit film.
  27. Ishihara Shunichi (Ebina JPX) Saito Keishi (Nabari JPX) Oda Shunri (Tokyo JPX) Shimizu Isamu (Yokohama JPX), Process for the preparation of photoelectromotive force member.
  28. Maydan Dan (Los Altos Hills CA) Somekh Sasson R. (Redwood City CA) Ryan-Harris Charles (La Honda CA) Seilheimer Richard A. (Pleasanton CA) Cheng David (San Jose CA) Abolnikov Edward M. (San Francisco, Semiconductor processing system with robotic autoloader and load lock.
  29. Tributsch Helmut (Berlin DEX) Beck Gerhard (Berlin DEX) Kunst Marinus (Berlin DEX) Kppers Udo (Berlin DEX) Lewerenz Hans-Joachim (Berlin DEX) Lilie Jochen (Berlin DEX) Werner Andre (Berlin DEX), System for optimizing process parameters in photoactive semiconductor manufacturing in-situ.

이 특허를 인용한 특허 (9)

  1. Shang Quanyuan ; Robertson Robert McCormick ; Law Kam S. ; Takehara Takako ; Won Taekyung ; Sun Sheng, Annealing an amorphous film using microwave energy.
  2. Lee, Walter; Hipwell, Jr., Roger Lee; Bonin, Wayne Allen; Wissman, Barry Dean; Boutaghou, Zine-Eddine; Crane, Peter, Apparatus and method to passivate magnets and magnetic materials.
  3. Juergen Weichart LI, HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber.
  4. Morishige,Yukio; Ueda,Atsushi, Laser CVD device and laser CVD method.
  5. Milicevic, Igor; Van Stralen, Mattheus Jacobus Nicolaas; Aldea, Eugen, Method for manufacturing a primary preform.
  6. Yin, Zhiping; Fischer, Mark, Oxygen plasma treatment for nitride surface to reduce photo footing.
  7. Miyamoto Takaaki,JPX ; Kadomura Shingo,JPX ; Kawashima Atsushi,JPX, Plasma CVD process and semiconductor device having metal film formed by the process.
  8. Masayoshi Murata JP; Yoshiaki Takeuchi JP; Hiroshi Mashima JP; Akemi Takano JP; Hirohisa Yoshida JP, Plasma chemical vapor deposition apparatus.
  9. Mizuta, Masashi, Vapor deposition apparatus and method associated.

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