초록 ▼

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on t

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

대표청구항 ▼

[ What is claimed is:] [1.] An electronic circuit comprising:a semiconductor film having a thickness less than 1500 .ANG. and comprising silicon;a source and drain provided in said semiconductor film;a channel provided in said semiconductor film between said source and drain;a gate electrode provide

[ What is claimed is:] [1.] An electronic circuit comprising:a semiconductor film having a thickness less than 1500 .ANG. and comprising silicon;a source and drain provided in said semiconductor film;a channel provided in said semiconductor film between said source and drain;a gate electrode provided adjacent to said channel with a gate insulating film therebetween;an oxide of a material of said gate electrode provided on at least a side of said gate electrode;a first layer comprising titanium and nitrogen; anda second layer comprising aluminum and provided with said first layer preventing said semiconductor film and said second layer from being in contact with each other,wherein said semiconductor film is in contact with said first layer at a region thereof which is provided in at least one of said source and drain and which contains therein an element selected from the group consisting of phosphorous, arsenic and boron at a concentration of 1.times.10.sup.19 to 1.times.10.sup.21 /cm.sup.3,wherein said channel extends beyond side edges of said gate electrode in a direction along said source and drain, andwherein said gate insulating film extends on a part of said channel extending beyond said side edges of said gate electrode to sandwich said channel between said gate insulating film and an insulating surface underlying said channel.