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특허 상세정보

MyON담기
내보내기 페이스북 공유 카카오톡 공유

Integrated IR, visible and NIR sensor and methods of fabricating same

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-031/0256    H01L-031/0232    H01L-027/148   
미국특허분류(USC) 257/440 ; 257/184 ; 257/188 ; 257/228 ; 257/432 ; 257/438 ; 257/442 ; 257/447
출원번호 US-0778934 (1997-01-03)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Schubert
인용정보 피인용 횟수 : 232  인용 특허 : 0
초록
▼

An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that has low noise photogate charge-mode readout circuitry (20, 21, 26, 28) (e.g., CCD or CMOS readout circuitry and structures) that is disposed upon a first surface (18) of the layer. A second, opposing surface of the layer is a radiation admitting surface of the layer. The layer has a bandgap selected for absorbing electromagnetic radiation having wavelengths short...

대표
청구항
▼

[ What is claimed is:] [1.] An imaging device having a plurality of unit cells that contribute to forming an image of a scene, said imaging device comprising a layer of wide bandgap semiconductor material having photogate charge-mode readout circuitry disposed upon a first surface of said layer, a second, opposing surface of said layer being bonded at a heterojunction interface to a surface of a layer of narrower bandgap semiconductor material selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer and for gen...

이 특허를 인용한 특허 피인용횟수: 232

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