초록 ▼

In a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surface, a predetermined under-heating portion of the amorphous semiconductor film is partially heated with a heating source emitting heating rays. While heating, the under-heating por

In a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surface, a predetermined under-heating portion of the amorphous semiconductor film is partially heated with a heating source emitting heating rays. While heating, the under-heating portion is shifted by moving the heating source or the substrate. Accordingly, the amorphous semiconductor film is sequentially heat-treated and polycrystallized. As the under-heating portion shifts, the polycrystallization sequentially proceeds using the already polycrystallized portion by irradiation with the heating rays, which is adjacent to the under-heating portion, as seed crystal. Thus, the growth condition of crystal grains is uniformly controlled in the shifting direction of the under-heating portion.

대표청구항 ▼

[ What is claimed is:] [1.] A method for fabricating a semiconductor device, comprising the steps of:depositing an amorphous semiconductor film on a substrate having an insulating surface; andpolycrystallizing the amorphous semiconductor film to obtain a polycrstallized semiconductor,wherein the ste

[ What is claimed is:] [1.] A method for fabricating a semiconductor device, comprising the steps of:depositing an amorphous semiconductor film on a substrate having an insulating surface; andpolycrystallizing the amorphous semiconductor film to obtain a polycrstallized semiconductor,wherein the step of polycrystallizing the amorphous semiconductor film includes the steps of:heating an under-heating portion on the substrate with the amorphous semiconductor film formed thereon with a heating source;setting a shifting speed in such a range that a temperature of the under-heating portion becomes equal to or higher than a melting temperature of the amorphous semiconductor but lower than a melting temperature of the polycrystallized semiconductor, by setting the shifting speed to be equal to or less than a value obtained by dividing a width of the under-heating portion by a time required from the start of the heating until the temperature of the under-heating portion reaches the melting temperature of the amorphous semiconductor; andshifting at least one of the heating source and the substrate at the shifting speed so as to shift the under-heating portion along the substrate surface,wherein during the heating step, the amorphous semiconductor and the already-polycrystallized semiconductor are located adjacent each other within the under-heating portion so as to be simultaneously heated, and polycrystallization proceeds from an edge of the already-polycrystallized semiconductor.