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An optimized power output clamping structure, includes a power output transistor having a first breakdown voltage and a breakdown structure having a second breakdown voltage coupled to the power output transistor. The second breakdown voltage is less than the first breakdown voltage and follows the

An optimized power output clamping structure, includes a power output transistor having a first breakdown voltage and a breakdown structure having a second breakdown voltage coupled to the power output transistor. The second breakdown voltage is less than the first breakdown voltage and follows the first breakdown voltage across all temperature and semiconductor process variations. This feature allows a reduction in breakdown voltage guardbanding and increases output structure reliability. A method of protecting a circuit from inductive flyback is also disclosed. The method includes the steps of driving an inductive load with drive circuitry, turning off the inductive load, and clamping an inductive voltage at a voltage magnitude that protects the drive circuitry from breakdown across all temperature and processing variations.

대표청구항 ▼

[ What is claimed is:] [1.] An optimized output clamping structure, comprising:a output transistor having a first breakdown voltage;a breakdown transistor having a substantially similar structural device layout as the output transistor, but modified slightly to ensure a breakdown voltage lower than

[ What is claimed is:] [1.] An optimized output clamping structure, comprising:a output transistor having a first breakdown voltage;a breakdown transistor having a substantially similar structural device layout as the output transistor, but modified slightly to ensure a breakdown voltage lower than the breakdown voltage of the output transistor and that follows breakdown voltage variations of the output transistor across all temperature and semiconductor process variations; anda zener diode coupled in parallel with the breakdown transistor.