초록 ▼

The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperat

The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

대표청구항 ▼

[ What is claimed is:] [12.] A method for cleaning a processing chamber, said method comprising:depositing a dielectric film on a wafer on a ceramic heater in said processing chamber in a first time period, said ceramic heater heated to a first temperature of at least about 500.degree. C. during sai

[ What is claimed is:] [12.] A method for cleaning a processing chamber, said method comprising:depositing a dielectric film on a wafer on a ceramic heater in said processing chamber in a first time period, said ceramic heater heated to a first temperature of at least about 500.degree. C. during said deposition step;introducing reactive species into said processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, said ceramic heater heated to a second temperature of at least about 500.degree. C. during said introducing step; andcleaning surfaces in said processing chamber, said cleaning performed by said reactive species.