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Apparatus for baking photoresist applied on substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05C-013/00
출원번호 US-0654885 (1996-05-29)
우선권정보 JP-0119108 (1996-05-14)
발명자 / 주소
  • Mita Katsuhisa,JPX
  • Matsuoka Yasuo,JPX
  • Taniyama Kenichi,JPX
  • Takano Michirou,JPX
  • Akasaki Tsuneo,JPX
  • Kanda Kaoru,JPX
출원인 / 주소
  • Kabushiki Kaisha Toshiba, JPX
대리인 / 주소
    Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
인용정보 피인용 횟수 : 38  인용 특허 : 10

초록

A photomask substrate, which is formed in a rectangular shape and on the surface of which photoresist is applied, is located above a lower heating plate so as to be separated from the lower heating plate by a proximity distance. The lower heating plate is provided with a heat unifying ring fixedly a

대표청구항

[ What is claimed is:] [1.] An apparatus for processing photoresist applied on a surface of a substrate, comprising:a first heating plate for heating said substrate, said substrate is located on said first heating plate so as to directly contact said first heating plate or to be separated there from

이 특허에 인용된 특허 (10)

  1. Sekiguchi Atsushi (Fuchu JPX) Kobayashi Tsukasa (Fuchu JPX) Takagi Shinji (Fuchu JPX), Apparatus for forming a metal thin film utilizing temperature controlling means.
  2. Awaya Nobuyoshi (Isehara JPX) Arita Yoshinobu (Atsugi JPX), Apparatus for growing a thin metallic film.
  3. Iwasaki Masanobu (Hyogo JPX) Itoh Hiromi (Hyogo JPX), Method of an apparatus for forming thin film for semiconductor device.
  4. Mears Eric L. (Rockport MA), Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum.
  5. Yamamoto Shigeyuki (Nara JPX) Yamada Yuichiro (Suita JPX) Hohchin Ryuzoh (Hirakata JPX) Tanabe Hiroshi (Yamatotakada JPX) Okumura Tomohiro (Hirakata JPX), Plasma CVD system.
  6. Chida Atsushi (Nara) Sannomiya Hitoshio (Osaka) Nomoto Katsuhiko (Kashiwara) Okamoto Hiroshi (Nara) Yamamoto Yoshihiro (Nara), Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder.
  7. Saito Masasi (Yamanashi JPX) Iwata Teruo (Nirasaki JPX) Ishii Nobuo (Yamanashi JPX) Ikeda Towl (Kofu JPX) Saeki Hiroaki (Yamanashi JPX), Reduced pressure processing system and reduced pressure processing method.
  8. Murakami Seishi (Koufu JPX), Semiconductor processing apparatus.
  9. Suzuki Keizo (Kodaira JPX) Hiraoka Susumu (Kokubunji JPX) Nishimatsu Shigeru (Kokubunji JPX), Surface treatment and apparatus therefor.
  10. Sato Mitsuo (Zama JPX) Yoshikawa Kiyoshi (Kawasaki JPX) Sato Yuusuke (Tokyo JPX), Vapor growth apparatus for semiconductor devices.

이 특허를 인용한 특허 (38)

  1. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
  2. Mita Katsuhisa,JPX ; Matsuoka Yasuo,JPX ; Taniyama Kenichi,JPX ; Takano Michirou,JPX ; Akasaki Tsuneo,JPX ; Kanda Kaoru,JPX, Apparatus for baking photoresist applied on substrate.
  3. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  4. Yoshioka Kazutoshi,JPX, Baking apparatus and baking method.
  5. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  6. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  7. Shirakawa Eiichi,JPX, Heat processing apparatus.
  8. Kim,Byung Hee; Lee,Jong Myeong; Lee,Myoung Bum; Yun,Ju Young; Choi,Gil Heyun, Heating chamber and method of heating a wafer.
  9. Jones, William D., High pressure fourier transform infrared cell.
  10. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  11. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  12. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  13. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  14. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  15. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  16. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  17. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  18. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  19. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  20. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  21. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  22. Imanishi,Makoto; Narita,Shoriki; Ikeya,Masahiko; Kanayama,Shinji; Mae,Takaharu, Method of forming bumps on a wafer utilizing a post-heating operation, and an apparatus therefore.
  23. Imanishi, Makoto; Narita, Shoriki; Ikeya, Masahiko; Kanayama, Shinji; Mae, Takaharu, Method of forming bumps on a wafer utilizing a post-heating operation, and apparatus therefor.
  24. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  25. Tun-Ho Teng TW; Ching-Chao Wang TW, Moving heaters disposed in a susceptor device in a masked sputtering chamber.
  26. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  27. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  28. Wuester,Christopher D., Process flow thermocouple.
  29. Miyagi Tadashi,JPX ; Yamada Yoshiaki,JPX ; Saito Takayuki,JPX, Semiconductor manufacturing device and method of processing wafer.
  30. Katayama, Kyoshige; Yoshimura, Yuta; Tamura, Takeshi, Substrate processing apparatus.
  31. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  32. Kristian E. Johnsgard ; Brad S. Mattson ; James McDiarmid ; Vladimir J. Zeitlin, System and method for thermal processing of a semiconductor substrate.
  33. Shinya,Hiroshi; Souma,Yasutaka; Kitano,Takahiro, Thermal treatment equipment and thermal treatment method.
  34. Shimomaki, Shinichi; Miyagawa, Makoto; Ishii, Hiromitsu; Nakamura, Yayoi; Higashi, Toshiaki, Transparent electrode forming apparatus and method of fabricating active matrix substrate.
  35. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  36. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  37. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
  38. Kim Jong-kwan,KRX ; Choi Sun-jib,KRX, Wafer spinner having a heat controller for fabricating a semiconductor device.
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