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Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/06
  • H01L-033/00
출원번호 US-0746810 (1996-11-18)
우선권정보 FR-0013785 (1995-11-21)
발명자 / 주소
  • Duboz Jean-Yves,FRX
출원인 / 주소
  • Thomson-CSF, FRX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 60  인용 특허 : 0

초록

An optoelectronic quantum well device comprises a stack of layers that have different gap widths and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels, this stack of layers being included between two reflection means. The device also comprises a diffra

대표청구항

[ What is claimed is:] [1.] An optoelectronic quantum well device comprising:a stack of semiconducting layers that have different bandgap energies and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels capable of sustaining an inter-subband transition o

이 특허를 인용한 특허 (60)

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