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특허 상세정보

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Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-029/06    H01L-033/00   
미국특허분류(USC) 257/021 ; 257/096 ; 257/098 ; 257/184 ; 257/432
출원번호 US-0746810 (1996-11-18)
우선권정보 FR-0013785 (1995-11-21)
발명자 / 주소
  • Duboz Jean-Yves,FRX
출원인 / 주소
  • Thomson-CSF, FRX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 60  인용 특허 : 0
초록

An optoelectronic quantum well device comprises a stack of layers that have different gap widths and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels, this stack of layers being included between two reflection means. The device also comprises a diffraction grating between one of the mirrors and the stack of layers.

대표
청구항
▼

[ What is claimed is:] [1.] An optoelectronic quantum well device comprising:a stack of semiconducting layers that have different bandgap energies and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels capable of sustaining an inter-subband transition of a carrier transiting from one of said energy levels to the other, thereby to provide absorption or emission of photons within a selected frequency band corresponding to the difference in said energy levels with relatively little absorption or emission outsid...

이 특허를 인용한 특허 (60)

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