초록 ▼

A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provi

A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising a polycrystalline semiconductor film formed on a insulating surface, said polycrystalline semiconductor film including at least a source region, a drain region, and a channel region therein and having crystals extending in one direction c

[ What is claimed is:] [1.] A semiconductor device comprising a polycrystalline semiconductor film formed on a insulating surface, said polycrystalline semiconductor film including at least a source region, a drain region, and a channel region therein and having crystals extending in one direction completely through said channel region,wherein carriers flow through said channel region in the direction in which said crystals extend.