초록 ▼

Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After th

Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.

대표청구항 ▼

[ What is claimed is:] [3.] A method of manufacturing a semiconductor device having at least one thin film transistor, comprising the steps of:disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized

[ What is claimed is:] [3.] A method of manufacturing a semiconductor device having at least one thin film transistor, comprising the steps of:disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being capable of promoting crystallization of said semiconductor film wherein said selected region has a rectangular shape lengthened in a first direction;crystallizing said semiconductor film by heating where crystals grow from said selected region in a second direction orthogonal to the first direction and parallel with said insulating surface;patterning said semiconductor film into an island after the step of crystallization thereof so that said island comprise the crystals extending in the second direction; andforming source and drain regions in said island with a channel region defined therebetween,wherein said island is so arranged that the crystals of the transistor extend between the source and drain regions through the channel region in a direction which is coincidence with a direction in which carriers of the transistor flow.