초록 ▼

This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device may be an electronic or optoelectronic devic

This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device may be an electronic or optoelectronic device. The semiconductor layer may be a metal or other substance.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a low-k layer in an integrated circuit, comprising:depositing a low-k layer comprising a tetrafluoroethylene/2,2-bis(trifluoromethyl)-4,5-difluoro-1,3-dioxol copolymer on a partially completed integrated circuit, wherein the low-k layer has an exposed

[ What is claimed is:] [1.] A method of forming a low-k layer in an integrated circuit, comprising:depositing a low-k layer comprising a tetrafluoroethylene/2,2-bis(trifluoromethyl)-4,5-difluoro-1,3-dioxol copolymer on a partially completed integrated circuit, wherein the low-k layer has an exposed face;dry etching the exposed face of the low-k layer;depositing a photoresist layer on the etched, exposed face of the low-k layer;patterning the photoresist layer to expose portions of the low-k layer;depositing a mask layer on the patterned photoresist layer and exposed portions of the low-k layer,wherein the mask layer comprises aluminum;removing the patterned photoresist layer and the portions of the mask layer overlying the patterned photoresist layer; anddry etching the integrated circuit to remove the low-k layer except in areas underlying the mask layer, whereby a patterned low-k layer is formed.