초록 ▼

A novel interconnect layout method and metallization scheme is provided that simplifies the process of fabricating multilayer interconnects. The process of the present invention provides a multilevel interconnect structure formed solely from patterned metal layers stacked on top of each other. Both

A novel interconnect layout method and metallization scheme is provided that simplifies the process of fabricating multilayer interconnects. The process of the present invention provides a multilevel interconnect structure formed solely from patterned metal layers stacked on top of each other. Both interconnect lines which form electrical connections along horizontal paths, as well as contacts which form electrical connections along vertical paths, can be formed using patterned metal interconnects as building-blocks. No specific process module is needed for contact layers. The use of patterned metal layers formed from the same process modules makes both design and construction of multilayer interconnects simpler. Accordingly, the manufacturing process is simplified, thus resulting in lower cost. To form thicker metal layers for the purpose of constructing thick interconnect lines, two or more patterned metal layers may be stacked on each other. In this manner, vertical low ohmic bussing is made possible.

대표청구항 ▼

[ What is claimed is:] [15.] A multilayer interconnect structure for connecting conductive regions to conductive regions separated by insulating regions supported on a semiconductor substrate, said semiconductor substrate containing conducting regions therein which are electrically contacted by port

[ What is claimed is:] [15.] A multilayer interconnect structure for connecting conductive regions to conductive regions separated by insulating regions supported on a semiconductor substrate, said semiconductor substrate containing conducting regions therein which are electrically contacted by portions of said multilayer interconnect structure, said multilayer interconnect structure comprising a plurality of planar structures stacked one on top of another over said semiconductor substrate, each planar structure having a top surface and a bottom surface and having at least one adjacent planar structure contacting said top surface, said bottom surface, or both, and each planar structure comprising a patterned metal layer comprising either a single conductor layer or said single conductor layer and a substantially thinner barrier layer, said patterned metal layer embedded in a dielectric, thereby forming metal regions and dielectric regions, said patterned metal layer exposed at both said top surface and said bottom surface of said planar structures, thereby enabling electrical contact to be formed between selected metal regions in said adjacent planar structures so as to form electrical connection along paths perpendicular to said semiconductor substrate and electrical connection on paths parallel to said semiconductor substrate, wherein some of said single conductor layers comprise tungsten and other of said single conductor layers comprise aluminum.