초록 ▼

The electronic device has a structure that a semiconductor package (10) is mounted on a motherboard (21), and a buffer layer (41) for relieving a stress, which is produced due to a difference of physical properties between the semiconductor package (10) and the motherboard (21), is mounted on the el

The electronic device has a structure that a semiconductor package (10) is mounted on a motherboard (21), and a buffer layer (41) for relieving a stress, which is produced due to a difference of physical properties between the semiconductor package (10) and the motherboard (21), is mounted on the electrical and mechanical interface between the semiconductor package (10) and the motherboard (21). For example, the buffer layer (41) having a thermal expansion coefficient close to that of the motherboard (21) is formed on a face of the semiconductor package 10 having an external connecting terminals (12b) mounted. A stress caused due to a difference between a thermal expansion coefficient of a wiring substrate (12) of the semiconductor package and that of the motherboard (21) can be relieved by the buffer layer (41). Therefore, a cyclic stress applied to the connection between the semiconductor package and the motherboard in the actual application environment can be relieved, and reliability of connection can be improved. Thus, a semiconductor package mountable with a high degree of reliability and an electronic device having a high degree of reliability is provided.

대표청구항 ▼

[ What is claimed is:] [1.] An electronic device, comprising:a first wiring substrate having a first face, the first face of the first wiring substrate having a first region and a second region, connecting terminals formed on the first region, and the first wiring substrate having a first thermal ex

[ What is claimed is:] [1.] An electronic device, comprising:a first wiring substrate having a first face, the first face of the first wiring substrate having a first region and a second region, connecting terminals formed on the first region, and the first wiring substrate having a first thermal expansion coefficient;a semiconductor package comprises,a second wiring substrate having a first face and a second face, the first face of the second wiring substrate having a first region and a second region, the first connecting terminals in the first region which are faced with the connecting terminals of the first substrate, second connecting terminals formed on the second face which are connected with the first connecting terminals, and the second wiring substrate having a second thermal expansion coefficient, andat least one semiconductor chip mounted on the second face of the second wiring substrate, and the semiconductor chip having electrodes connected with the second connecting terminals;connecting means for connecting the connecting terminals of the first wiring substrate and the first connecting terminals of the second wiring substrate; and,a buffer layer interposed between the second region of the first face of the first wiring substrate and the second region of the first face of the second wiring substrate, the buffer layer having a third thermal expansion coefficient which is in the range between the first thermal expansion coefficient and the second thermal expansion coefficient.