초록 ▼

A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconven

A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

대표청구항 ▼

[ We claim:] [1.] A plasma process apparatus comprising:a plasma reactor having a powered electrode on which a wafer is to be placed for processing;a single rf power supply that produces power at a single rf frequency f in the range greater than 13.56 MHz and up to 200 MHz connected to said powered

[ We claim:] [1.] A plasma process apparatus comprising:a plasma reactor having a powered electrode on which a wafer is to be placed for processing;a single rf power supply that produces power at a single rf frequency f in the range greater than 13.56 MHz and up to 200 MHz connected to said powered electrode, said frequency f selected so as to optimize a wafer process to be carried out in said reactor.