초록 ▼

A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is th

A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is then applied to the substrate and the substrate is surface treated by adding an etching gas to the reactor chamber, at a predetermined, first flow rate and coupling in a high frequency power with a first, predetermined power density for ionic etching for a first, predetermined period of time. The surface treated substrate is separated from the negative bias voltage and a semiconductor cover layer is chemical vapor-phase deposited on the substrate by adding to the reactor chamber a multi-component mixture of process gases containing a semiconductor element in bound form at a second, predetermined flow rate and coupling-in of HF power with a predetermined, second power density, for a second, predetermined time period.

대표청구항 ▼

[ What is claimed is:] [1.] A method of producing a biocompatible prosthesis based on a prefabricated substrate comprised essentially of metal or ceramic, said method comprising:placing the substrate into a reactor chamber of a cathodic vapor deposition arrangement and evacuating the chamber to a pr

[ What is claimed is:] [1.] A method of producing a biocompatible prosthesis based on a prefabricated substrate comprised essentially of metal or ceramic, said method comprising:placing the substrate into a reactor chamber of a cathodic vapor deposition arrangement and evacuating the chamber to a pressure;surface treating the substrate by applying a negative bias voltage to the substrate, and adding an etching gas, at a first flow rate and coupling in a high frequency (HF) power, with a first power density, into the reactor chamber for ionic etching a surface of the substrate for a first period of time;separating the surface-treated substrate from the negative bias voltage; andchemical vapor-phase depositing a semiconductor cover layer on the surface of the substrate by adding a multi-component mixture of process gases containing a semiconductor element in bound form at a second flow rate and coupling-in of HF power, with a second power density, into the reactor chamber for a second time period.