초록 ▼

Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation hardening dopants and electrically active dopants

Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Silicon wafers also may use solid reactants which include deposited layers of metal and polysilicon to form silicide bonded zones. Oxidizers such as nitric acid may be used in the bonding liquid, and a bonding liquid may be used in conjunction with a solid bonding reactant. Dielectric layers on silicon wafers may be used when additional silicon is provided for the bonding reactions. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening and buried resistors.

대표청구항 ▼

[ What is claimed is:] [1.] A method of wafer bonding, comprising the steps of:providing a device wafer with a first surface layer made of a first material;providing a handle wafer with a second surface layer made of a second material said second material being different from said first material and

[ What is claimed is:] [1.] A method of wafer bonding, comprising the steps of:providing a device wafer with a first surface layer made of a first material;providing a handle wafer with a second surface layer made of a second material said second material being different from said first material and no more than one of said two materials is a metal;joining said first surface to said second surface with a quantity of reactant there between said reactant characterized by chemical reaction with said first material yielding a bonding material differing from both said first material and said second material;forming a bonded zone of said bonding material which bonds said device and handle wafers together by reaction of said reactant with said first surface layer, wherein:(a) said first material is silicon;(b) said second material is an aluminum oxide; and(c) said reactant includes a nitrate.