|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||438/507 ; 438/478|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 328 인용 특허 : 10|
A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si laye...
[ What is claimed is:] [1.] A semiconductor substrate producing method comprising:forming a first porous Si layer on at least one surface of a Si substrate; andforming a second layer having a larger porosity than the first porous Si layer at a constant depth from a surface of said porous Si in said first porous Si layer.