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특허 상세정보

Method for producing semiconductor substrate

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/76   
미국특허분류(USC) 438/507 ; 438/478
출원번호 US-0729722 (1996-10-07)
우선권정보 JP-0264386 (1996-10-04)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fitzpatrick, Cella Harper & Scinto
인용정보 피인용 횟수 : 328  인용 특허 : 10
초록

A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si laye...

대표
청구항

[ What is claimed is:] [1.] A semiconductor substrate producing method comprising:forming a first porous Si layer on at least one surface of a Si substrate; andforming a second layer having a larger porosity than the first porous Si layer at a constant depth from a surface of said porous Si in said first porous Si layer.

이 특허를 인용한 특허 피인용횟수: 328

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