초록 ▼

A bump structure of a semiconductor device includes at least one pad electrode formed on a semiconductor substrate; a test electrode formed on the semiconductor substrate, the pad electrode and the test electrode being located separately from one another; a passivation layer formed on an area of the

A bump structure of a semiconductor device includes at least one pad electrode formed on a semiconductor substrate; a test electrode formed on the semiconductor substrate, the pad electrode and the test electrode being located separately from one another; a passivation layer formed on an area of the semiconductor substrate other than that covered by the pad electrode and the test electrode; a metal layer integrally formed on a portion of the pad electrode and on a portion of the test electrode adjacent to the pad electrode; and a bump formed on an overall surface of the metal layer.

대표청구항 ▼

[ What is claimed is:] [1.] A bump structure of a semiconductor device, the bump structure comprising:at least one pad electrode on a semiconductor substrate;a test electrode on the semiconductor substrate, the pad electrode and the test electrode being located separately from one another;a passivat

[ What is claimed is:] [1.] A bump structure of a semiconductor device, the bump structure comprising:at least one pad electrode on a semiconductor substrate;a test electrode on the semiconductor substrate, the pad electrode and the test electrode being located separately from one another;a passivation layer on an area of the semiconductor substrate other than that covered by the pad electrode and the test electrode;a base metal layer formed on a portion of the pad electrode and on a portion of the test electrode adjacent to the pad electrode, the remaining portion of the test electrode extending beyond the base metal layer so as to be accessible by a test probe; anda bump on an overall surface of the base metal layer.