초록 ▼

An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride lay

An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.

대표청구항 ▼

[ I claim:] [1.] A process for depositing a titanium nitride barrier layer in a sputtering chamber fitted with a source of RF power connected to a substrate support comprising the following steps in sequence:a) sputter depositing a titanium layer onto the exposed surface of a substrate;b) forming a

[ I claim:] [1.] A process for depositing a titanium nitride barrier layer in a sputtering chamber fitted with a source of RF power connected to a substrate support comprising the following steps in sequence:a) sputter depositing a titanium layer onto the exposed surface of a substrate;b) forming a TiO.sub.x layer over the titanium layer; andc) sputter depositing a titanium nitride layer thereover.