초록 ▼

A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consi

A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

대표청구항 ▼

[ We claim:] [1.] A method of manufacturing a semiconductor device which includes p-type regions, comprising the steps of:(a) providing a substrate composed of a material represented by a symbol C; and(b) implanting into said substrate an ion compound of a composite dopant represented by a symbol A.

[ We claim:] [1.] A method of manufacturing a semiconductor device which includes p-type regions, comprising the steps of:(a) providing a substrate composed of a material represented by a symbol C; and(b) implanting into said substrate an ion compound of a composite dopant represented by a symbol A.sub.x C.sub.y wherein A representing a composition includes at least a single element useful as an acceptor in said substrate and C having a solid solubility higher than a solubility of a fluorine ion in said substrate where x and y are real numbers.