초록 ▼

The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion

The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.

대표청구항 ▼

[ What is claimed is:] [1.] A plasma reactor having a vacuum chamber with a cylindrical side portion of a first diameter and a ceiling at a certain height above the top of said cylindrical side portion, a wafer-holding pedestal adjacent the bottom of said vacuum chamber, gas injection ports adjacent

[ What is claimed is:] [1.] A plasma reactor having a vacuum chamber with a cylindrical side portion of a first diameter and a ceiling at a certain height above the top of said cylindrical side portion, a wafer-holding pedestal adjacent the bottom of said vacuum chamber, gas injection ports adjacent said cylindrical side portion and a vacuum pump, said reactor comprising:a generally planar disk-shaped conductive ceiling electrode adjacent said ceiling, said ceiling electrode being substantially the same in diameter as the wafer held in said wafer-holding pedestal;a coil antenna wound around a space between said conductive ceiling electrode and said wafer-holding pedestal; anda switch for individually switching selected ones of said coil antenna, said ceiling electrode and said wafer-pedestal between at least two of (a) a respective RF power source, (b) ground, (c) a floating potential.