초록 ▼

A magnetron sputtering system comprising a sputtering chamber. Present within the chamber are a flat cathode plate, an anode, which is cylindrical in one embodiment, and an annular auxiliary electrode. The electrodes are provided co-axially. In this embodiment the anode extends axially from a centra

A magnetron sputtering system comprising a sputtering chamber. Present within the chamber are a flat cathode plate, an anode, which is cylindrical in one embodiment, and an annular auxiliary electrode. The electrodes are provided co-axially. In this embodiment the anode extends axially from a central area of the sputtering surface of the cathode plate. The auxiliary electrode extends axially from a circumferential area of the sputtering surface of the cathode plate. The anode is electrically insulated from the cathode plate. During operation the auxiliary electrode has a negative potential in relation to the anode potential. Furthermore the chamber comprises a receiving device for receiving a flat substrate to be coated with cathode plate material at a position opposite and parallel to the cathode plate. A magnetic device is provided outside the chamber for generating an electron trap around the anode, which magnetic device is surrounded by the auxiliary electrode. The magnetic device generates an asymmetric magnetic field. The auxiliary electrode enhances the interception of electrons in the electron trap.

대표청구항 ▼

[ We claim:] [1.] A magnetron sputtering system comprising a chamber, and present within said chambera flat cathode plate,an anode centrally positioned on said flat cathode plate,an annular auxiliary electrode, which extends axially from a circumferential area of a sputtering surface of said cathode

[ We claim:] [1.] A magnetron sputtering system comprising a chamber, and present within said chambera flat cathode plate,an anode centrally positioned on said flat cathode plate,an annular auxiliary electrode, which extends axially from a circumferential area of a sputtering surface of said cathode plate, is positioned co-axially with said cathode plate and during operation has a negative potential in relation to the anode potential and thereby exerts an electric force in the direction of a central area of the cathode plate, said electric force directing electrons inwardly into a plasma field, anda receiving device for receiving a flat substrate to be coated with cathode plate material at a position opposite and parallel to said cathode plate, and present outside said chamber:a magnetic device for generating an electron trap over part of an intermediate area of the sputtering surface of the cathode plate located between a central area and said circumferential area, said electron trap being surrounded by said annular auxiliary electrode,whereby said magnetic device generates an asymmetric magnetic field, in such a manner that, seen from a geometrical set of points where a direction of a perpendicular magnetic field component is reversed, a field strength of magnetic field components parallel and perpendicular to the cathode plate is smaller in the direction of the circumferential area of the cathode plate than in the direction of the central area of the cathode plate.