초록 ▼

Disclosed is an interlayer insulating film using low dielectric constant films, which can be improved in rigidity without any effect exerted on the reliability of a semiconductor device. The interlayer insulating film, which is formed in such a manner as to cover surroundings of interconnections for

Disclosed is an interlayer insulating film using low dielectric constant films, which can be improved in rigidity without any effect exerted on the reliability of a semiconductor device. The interlayer insulating film, which is formed in such a manner as to cover surroundings of interconnections formed on the semiconductor device, includes low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of the interconnections and between the interconnections; and a supporting layer formed in or through at least one of the low dielectric constant films formed on the upper and lower sides of the interconnections.

대표청구항 ▼

[ What is claimed is:] [1.] An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising:low dielectric constant films, each having a dielectric constan

[ What is claimed is:] [1.] An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising:low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of said interconnections and between said interconnections; anda supporting layer, formed in or through at least one of said low dielectric constant films formed on the upper and lower sides of said interconnections, comprising a supporting portion at a nearly central portion of a space between interconnections which is wider than a pitch of any one of said interconnection layers, said supporting portion being separated from a nearest interconnection by a distance that is about three times a space between the interconnections in any of said interconnection layers.