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Embedded power and ground plane structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
출원번호 US-0873102 (1997-06-11)
발명자 / 주소
  • Bhattacharyya Arup
  • Leidy Robert K.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Ratner & PrestiaShkurko
인용정보 피인용 횟수 : 32  인용 특허 : 14

초록

A device architecture with embedded planar conductive ground and power planes in the device architecture. The apparatus includes a first conductive plane, a second conductive plane, a signal plane disposed between the first and second conductive planes, and a logic level disposed adjacent the first

대표청구항

[ What is claimed:] [1.] An apparatus comprising:a first conductive plane;a second conductive plane;a signal plane disposed between the first and second conductive planes; anda logic level disposed adjacent the first conductive plane and connected to the signal plane through at least one via in the

이 특허에 인용된 특허 (14)

  1. Vu Quat T. (Santa Clara CA) Gardner Donald S. (Mountain View CA), Capacitor fabricated on a substrate containing electronic circuitry.
  2. Gebara Ghassan R. (Spring TX), Electromagnetic radiation reduction technique using grounded conductive traces circumscribing internal planes of printed.
  3. Matsumoto Ryoichi (Tokyo JPX) Kuroda Toshikazu (Tokyo JPX) Kato Takao (Tokyo JPX), Fabrication process for wafer alignment marks by using peripheral etching to form grooves.
  4. Thomas Michael E. (Cupertino CA) Chinn Jeffrey D. (Foster City CA), High performance interconnect system for an integrated circuit.
  5. Allen David H. (Boise ID), Method for forming a shielding structure for decoupling signal traces in a semiconductor.
  6. Thomas Michael E. (Cupertino CA) Chinn Jeffrey D. (Foster City CA), Method of fabricating a high performance interconnect system for an integrated circuit.
  7. Ishibashi Takeo (Hyogo JPX), Method of forming a pattern of a multilayer type semiconductor device.
  8. Boyle Steven R. (Santa Clara CA) Proebsting Robert J. (Los Altos Hills CA) Herndon William H. (Sunnyvale CA), Method of making a multi-layer to package.
  9. Smith W. David (Abington CT) Olenick John A. (Thompson CT) Barton Carlos L. (Brooklyn CT) Cercena Jane L. (Ashford CT) Navarro Daniel J. (Putnam CT) Olenick Kathleen R. (Thompson CT) Kneeland Angela , Method of manufacture multichip module substrate.
  10. Oppenberg George A. (Brooklyn NY), Multilayer printed circuit board with pseudo-coaxial transmission lines.
  11. Sun Shih-Wei (Austin TX) Kosa Yasunobu (Austin TX) Yeargain John R. (Austin TX), Process for forming a structure which electrically shields conductors.
  12. Saito Yasuyuki (Yokohama JPX), Semiconductor integrated circuit having a long bus line.
  13. Jost Mark E. (Boise ID) Hansen David J. (Boise ID) McDonald Steven M. (Meridian ID), Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns.
  14. Wheeler Richard L. (San Jose CA), Special interconnect layer employing offset trace layout for advanced multi-chip module packages.

이 특허를 인용한 특허 (32)

  1. Diewald, Wolfgang; Mümmler, Klaus, Application of alignment marks to wafer.
  2. Carroll Michael Scott ; Ivanov Tony Georgiev ; Martin Samuel Suresh, Article for de-embedding parasitics in integrated circuits.
  3. Anthony Grass, Capacitor for a semiconductor device.
  4. Satya, Akella V. S.; Mantalas, Lynda C.; Pinto, Gustavo A., Chemical mechanical polishing test structures and methods for inspecting the same.
  5. Satya,Akella V. S.; Mantalas,Lynda C.; Pinto,Gustavo A., Chemical mechanical polishing test structures and methods for inspecting the same.
  6. Kerry Bernstein ; Robert M. Geffken ; Anthony K. Stamper ; Stephen A. St. Onge, Damascene metal capacitor.
  7. Zelikson, Michael; Waizman, Alex, Embedded power gating.
  8. Arai, Toshiyuki; Kawai, Ryousei; Tsuchiyama, Hirofumi; Kanai, Fumiyuki; Nakabayashi, Shinichi, Fabrication method of semiconductor integrated circuit device.
  9. Arai, Toshiyuki; Kawai, Ryousei; Tsuchiyama, Hirofumi; Kanai, Fumiyuki; Nakabayashi, Shinichi, Fabrication method of semiconductor integrated circuit device.
  10. Arai, Toshiyuki; Kawai, Ryousei; Tsuchiyama, Hirofumi; Kanai, Fumiyuki; Nakabayashi, Shinichi, Fabrication method of semiconductor integrated circuit device.
  11. Arai,Toshiyuki; Kawai,Ryousei; Tsuchiyama,Hirofumi; Kanai,Fumiyuki; Nakabayashi,Shinichi, Fabrication method of semiconductor integrated circuit device.
  12. Carroll Michael Scott ; Ivanov Tony Georgiev ; Martin Samuel Suresh, Integrated circuit comprising means for high frequency signal transmission.
  13. Awaya,Nobuyoshi, Manufacturing method for short distance wiring layers and long distance wiring layers in a semiconductor device.
  14. Jonathan Chapple-Sokol ; Paul M. Feeney ; Robert M. Geffken ; David V. Horak ; Mark P. Murray ; Anthony K. Stamper, Metallurgy for semiconductor devices.
  15. Ying-Ho Chen TW; Wen-Chih Chiou TW; Tsu Shih TW; Syun-Ming Jang TW, Method to eliminate copper CMP residue of an alignment mark for damascene processes.
  16. Cheong, Seong-Hwee; Choi, Gil-Heyun; Lee, Sang-Woo; Park, Jin-Ho, Methods of fabricating semiconductor devices including contact plugs having laterally extending portions.
  17. Pinto, Gustavo A.; Leslie, Brian C.; Adler, David L.; Satya, Akella V. S.; Satya, legal representative, Padma A.; Long, Robert Thomas; Walker, David J., Multiple directional scans of test structures on semiconductor integrated circuits.
  18. Archibald J. Allen ; Orest Bula ; John M. Cohn ; Daniel Cole ; Edward W. Conrad ; William C. Leipold, Optical Proximity Correction Structures Having Decoupling Capacitors.
  19. Hamada, Koji, Semiconductor device with interlayer film comprising a diffusion prevention layer to keep metal impurities from invading the underlying semiconductor substrate.
  20. Chen, Shao-Yun; Chen, Hsien-Wei; Huang, Li-Hsien, Test key strcutures, integrated circuit packages and methods of forming the same.
  21. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  22. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  23. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  24. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  25. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  26. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  27. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  28. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  29. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  30. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  31. Lin Yung-Fa,TWX, Vertical via/contact.
  32. Zhang,Guobiao, nF-Opening Aiv Structures.
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