초록 ▼

A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation fil

A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1.times.10.sup.20 atoms/cm.sup.3.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device, comprising:a substrate having a first and a second region;a first insulating film formed above said substrate and containing silicon-fluorine bonds, said first insulating film having a first thickness on said first region and having a second thickn

[ What is claimed is:] [1.] A semiconductor device, comprising:a substrate having a first and a second region;a first insulating film formed above said substrate and containing silicon-fluorine bonds, said first insulating film having a first thickness on said first region and having a second thickness greater than said first thickness on said second region;a titanium-based metal wiring layer formed on said first insulating film; anda second insulating film at least formed on said wiring layer and having an opening for wire bonding on said wiring layer above said first region of said substrate.