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Device for heat treatment of objects and a method for producing a susceptor

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • C03B-025/00
  • H05B-006/10
  • F27B-005/04
출원번호 US-0543628 (1995-10-16)
발명자 / 주소
  • Kordina Olle,SEX
  • Hermansson Willy,SEX
  • Tuominen Marko,SEX
출원인 / 주소
  • Okmetic Ltd., FIX
대리인 / 주소
    Pollock, Vande Sande & Priddy
인용정보 피인용 횟수 : 24  인용 특허 : 4

초록

The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an

대표청구항

[ We claim:] [1.] A device for heat treatment of objects, comprising:a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition;the susceptor including an inner wall and an out

이 특허에 인용된 특허 (4)

  1. Ogawa Hiroyasu (Shizuoka JPX) Nonaka Kazuo (Shizuoka JPX) Noda Hiroto (Shizuoka JPX), Apparatus for production of graphite fibers.
  2. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
  3. Ban Vladimir S. (Hopewell NJ), Radiation heated reactor for chemical vapor deposition on substrates.
  4. Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX), Sublimation growth of single crystal SiC.

이 특허를 인용한 특허 (24)

  1. Käppeler, Johannes; Wischmeyer, Frank, CVD reactor with RF-heated process chamber.
  2. Kaeppeler,Johannes; Wischmeyer,Frank; Berge,Rune, CVD reactor with graphite-foam insulated, tubular susceptor.
  3. Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John, Deposition systems and susceptor assemblies for depositing a film on a substrate.
  4. Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John, Directed reagents to improve material uniformity.
  5. Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
  6. Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
  7. Paisley, Michael James; Sumakeris, Joseph John, Gas driven planetary rotation apparatus and methods for forming silicon carbide layers.
  8. Paisley, Michael; Sumakeris, Joseph John; Kordina, Olle, Gas-driven rotation apparatus and method for forming silicon carbide layers.
  9. Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
  10. Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
  11. Sumakeris,Joseph John; Paisley,Michael James, Housing assembly for an induction heating device including liner or susceptor coating.
  12. Sumakeris, Joseph John; Paisley, Michael James, Induction heating devices and methods for controllably heating an article.
  13. Hara,Kazukuni; Nagakubo,Masao; Onda,Shoichi, Manufacturing method for producing silicon carbide crystal using source gases.
  14. Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi, Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same.
  15. Lofgren Peter,SEX ; Gu Chun Yuan,SEX ; Hallin Christer,SEX ; Liu Yujing,SEX, Method and a device for epitaxial growth of objects by chemical vapor deposition.
  16. Kazukuni Hara JP; Kouki Futatsuyama JP; Shoichi Onda JP; Fusao Hirose JP; Emi Oguri JP; Naohiro Sugiyama JP; Atsuto Okamoto JP, Method and apparatus for fabricating high quality single crystal.
  17. Kordina, Olle Claes Erik; Paisley, Michael James, Method and apparatus for growing silicon carbide crystals.
  18. De Ridder, Christianus Gerardus Maria, Method and system for loading substrate supports into a substrate holder.
  19. Dando, Ross S.; Carpenter, Craig M.; Mardian, Allen P.; Derderian, Garo J.; Gealy, Dan, Method for delivering precursors.
  20. Sumakeris, Joseph John; Paisley, Michael James, Methods for controllably induction heating an article.
  21. Sumakeris,Joseph John; Paisley,Michael James; O'Loughlin,Michael John, Methods for controlling formation of deposits in a deposition system and deposition methods including the same.
  22. Kong Hua-Shuang ; Carter ; Jr. Calvin ; Sumakeris Joseph, Susceptor designs for silicon carbide thin films.
  23. Kong, Hua-Shuang; Carter, Jr., Calvin; Sumakeris, Joseph, Susceptor designs for silicon carbide thin films.
  24. Oosterlaken,Theodorus Gerardus Maria, Susceptor plate for high temperature heat treatment.
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