초록 ▼

A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film,

A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20.degree. to 150.degree. C.

대표청구항 ▼

[ What is claimed is:] [1.] A process for fabricating a semiconductor comprising:forming a semiconductor film comprising silicon on an insulating surface of a substrate;disposing a metal containing catalyst in contact with a first portion of said semiconductor film;annealing said semiconductor film

[ What is claimed is:] [1.] A process for fabricating a semiconductor comprising:forming a semiconductor film comprising silicon on an insulating surface of a substrate;disposing a metal containing catalyst in contact with a first portion of said semiconductor film;annealing said semiconductor film to crystallize said semiconductor film without removing said catalyst; and thentreating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal at least from a second portion of said semiconductor film, said second portion being distant from said first portion.