초록 ▼

A method is provided for making conductive structures whereby an insulating layer is formed over a substrate. A conductive layer is then formed over the insulating layer. A first photoresist layer is formed over the conductive layer, patterned and developed. The conductive layer is etched after whic

A method is provided for making conductive structures whereby an insulating layer is formed over a substrate. A conductive layer is then formed over the insulating layer. A first photoresist layer is formed over the conductive layer, patterned and developed. The conductive layer is etched after which the first photoresist layer is removed. A second photoresist layer is formed over the integrated circuit, patterned and developed. The remaining regions of the conductive layer forming an interconnect or a gate are partially etched to form two-tiered stepped sidewalls.

대표청구항 ▼

[ What is claimed is:] [1.] A method of producing a conductive structure of a semiconductor integrated circuit having stepped walls, comprising the steps of:forming an insulating layer over a substrate;forming a conductive layer over the insulating layer;forming a first photoresist layer over the co

[ What is claimed is:] [1.] A method of producing a conductive structure of a semiconductor integrated circuit having stepped walls, comprising the steps of:forming an insulating layer over a substrate;forming a conductive layer over the insulating layer;forming a first photoresist layer over the conductive layer;patterning the first photoresist layer;etching the conductive layer to completely remove portions not covered by the patterned first photoresist layer and to form a remaining conductive layer;forming a second photoresist layer over the remaining conductive layer and the insulating layer;patterning the second photoresist layer;partially etching the remaining conductive layer to form a step; and,removing the second photoresist layer.