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Light-emitting gallium nitride-based compound semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0705972 (1996-08-30)
우선권정보 JP-0114544 (1993-05-17)
발명자 / 주소
  • Nakamura Shuji,JPX
  • Mukai Takashi,JPX
  • Iwasa Naruhito,JPX
출원인 / 주소
  • Nichia Chemical Industries, Ltd., JPX
대리인 / 주소
    Nixon & Vanderhye
인용정보 피인용 횟수 : 53  인용 특허 : 3

초록 ▼

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

대표청구항 ▼

[ What is claimed is:] [1.] A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:a p-type light-emitting layer having first and second surfaces, and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, in

이 특허에 인용된 특허 (3)

  1. Kitagawa Masahiko (Shiki JPX) Tomomura Yoshitaka (Nara JPX) Nakanishi Kenji (Nara JPX), Electroluminescent device of compound semiconductor with buffer layer.
    상세보기
  2. Yamada Masato (Annaka JPX) Takenaka Takao (Annaka JPX), Light emitting device with double heterostructure.
    상세보기
  3. Nakamura Shuji (Anan JPX) Mukai Takashi (Anan JPX) Iwasa Naruhito (Anan JPX), Light-emitting gallium nitride-based compound semiconductor device.
    상세보기

이 특허를 인용한 특허 (53)

  1. Oh,Steve Tchang Hun; Choi,Hong K.; Tsaur,Bor Yeu; Fan,John C. C., Bonding pad for gallium nitride-based light-emitting device.
    상세보기
  2. Oh,Tchang Hun; Choi,Hong K.; Fan,John C. C.; Narayan,Jagdish, Bonding pad for gallium nitride-based light-emitting devices.
    상세보기
  3. Yoo, Myung Cheol, Diode having high brightness and method thereof.
    상세보기
  4. Yoo, Myung Cheol, Diode having high brightness and method thereof.
    상세보기
  5. Yoo, Myung Cheol, Diode having high brightness and method thereof.
    상세보기
  6. Yoo, Myung Cheol, Diode having high brightness and method thereof.
    상세보기
  7. Yoo, Myung Cheol, Diode having high brightness and method thereof.
    상세보기
  8. Yoo,Myung Cheol, Diode having high brightness and method thereof.
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  9. Yoo, Myung Cheol, Diode having vertical structure.
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  10. Yoo, Myung Cheol, Diode having vertical structure.
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  11. Yoo, Myung Cheol, Diode having vertical structure.
    상세보기
  12. Narayan, Jagdish, Domain epitaxy for thin film growth.
    상세보기
  13. Edmond John A. ; Kong Hua-Shuang, Double heterojunction light emitting diode with gallium nitride active layer.
    상세보기
  14. Narayan, Jagdish; Ye, Jinlin; Hon, Schang-Jing; Fox, Ken; Chen, Jyh Chia; Choi, Hong K.; Fan, John C. C., Efficient light emitting diodes and lasers.
    상세보기
  15. Veenstra, Thomas J.; Vander Kuyl, Paul T.; Weeda, Matthew S.; Lanser, Michael L.; Israels, Kyle A.; Mulder, Jason R.; Vander Pol, Mark W., Electrical device having boardless electrical component mounting arrangement.
    상세보기
  16. Oh, Tchang-Hun; Choi, Hong K.; Tsaur, Bor-Yeu; Fan, John C. C.; Liao, Shirong; Narayan, Jagdish, Electrode for p-type gallium nitride-based semiconductors.
    상세보기
  17. Mulder, Jason R.; Boetsma, Justin Philip, Flexible light pipe.
    상세보기
  18. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
    상세보기
  19. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
    상세보기
  20. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
    상세보기
  21. Ando, Yuji; Miyamoto, Hironobu; Iwata, Naotaka; Matsunaga, Koji; Kuzuhara, Masaaki; Kasahara, Kensuke; Kunihiro, Kazuaki; Takahashi, Yuji; Nakayama, Tatsuo; Hayama, Nobuyuki; Ohno, Yasuo, Hetero-junction field effect transistor having an intermediate layer.
    상세보기
  22. Ohba Yasuo,JPX ; Yoshida Hiroaki,JPX, III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers.
    상세보기
  23. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer.
    상세보기
  24. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer.
    상세보기
  25. Ming-Jiunn Jou,TWX ; Biing-Jye Lee,TWX ; Tarn Jacob C.,TWX ; Chuan-Ming Chang,TWX ; Chia-Cheng Liu,TWX, Indium gallium nitride light emitting diode.
    상세보기
  26. Chang, Chun-Yen; Yang, Tsung Hsi, Light emitter device.
    상세보기
  27. Fleischmann, Eric L.; DeVries, Nick J.; Veenstra, Thomas J.; Judge, Michael K., Light for vehicles.
    상세보기
  28. Judge, Michael K., Light for vehicles.
    상세보기
  29. Veenstra, Thomas J.; Hiemstra, David L.; Heupel, Scott C., Light module.
    상세보기
  30. Fan, John C. C.; Choi, Hong K.; Oh, Tchang-Hun; Chen, Jyh Chia; Narayan, Jagdish, Light-emitting diode device geometry.
    상세보기
  31. Brown, Michael G.; Eliashevich, Ivan; Koszi, Louis A., Light-emitting diodes with loop and strip electrodes and with wide medial sections.
    상세보기
  32. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  33. Karpov, Sergey; Usikov, Alexander; Helava, Heikki I.; Tsvetkov, Denis; Dmitriev, Vladimir A., Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device.
    상세보기
  34. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques.
    상세보기
  35. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing p-n heterojunction-based structures utilizing HVPE techniques.
    상세보기
  36. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, Method for growing p-n homojunction-based structures utilizing HVPE techniques.
    상세보기
  37. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing p-type III-V compound material utilizing HVPE techniques.
    상세보기
  38. Rice, Peter; Hon, Schang-Jing; Wang, Alexander; O'Connor, Kevin, Method for reducing the resistivity of p-type II-VI and III-V semiconductors.
    상세보기
  39. Yoo, Myung Cheol, Method of making diode having reflective layer.
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  40. Yoo, Myung Cheol, Method of making diode having reflective layer.
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  41. Yoo, Myung Cheol, Method of making diode having reflective layer.
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  42. Nakamura, Shuji; Mukai, Takashi; Tanizawa, Koji; Mitani, Tomotsugu; Marui, Hiroshi, Nitride semiconductor device.
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  43. Nakamura,Shuji; Mukai,Takashi; Tanizawa,Koji; Mitani,Tomotsugu; Marui,Hiroshi, Nitride semiconductor device.
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  44. Nagahama, Shinichi; Nakamura, Shuji, Nitride semiconductor device and manufacturing method thereof.
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  45. Nagahama,Shinichi; Nakamura,Shuji, Nitride semiconductor device and manufacturing method thereof.
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  46. Kozaki, Tokuya; Sano, Masahiko; Nakamura, Shuji; Nagahama, Shinichi, Nitride semiconductor laser device.
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  47. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
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  48. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
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  49. Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito; Kiyoku, Hiroyuki, Nitride semiconductor light-emitting device.
    상세보기
  50. Sugiura Lisa,JPX ; Suzuki Mariko,JPX ; Itaya Kazuhiko,JPX ; Fujimoto Hidetoshi,JPX ; Nishio Johji,JPX ; Rennie John,JPX ; Sugawara Hideto,JPX, Nitride system semiconductor device and method for manufacturing the same.
    상세보기
  51. Veenstra, Thomas J.; Mulder, Jason R.; Fleischmann, Eric L., Overmolded circuit board and method.
    상세보기
  52. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, P-N homojunction-based structures utilizing HVPE growth III-V compound layers.
    상세보기
  53. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., P-n heterojunction-based structures utilizing HVPE grown III-V compound layers.
    상세보기

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