초록 ▼

A system for measuring the doping levels of a doped region in a semiconductor substrate, wherein an analyzer beam and a reference beam are generated, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overla

A system for measuring the doping levels of a doped region in a semiconductor substrate, wherein an analyzer beam and a reference beam are generated, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overlapping. The analyzer beam is focused on a preselected doped region of the substrate and the reference beam is focused on an undoped region of the substrate, the doped region generating a phase shift of the analyzer beam relative to the reference beam corresponding to a level of doping of the doped region of the substrate. A detector detects the phase shift of the analyzer beam relative to the reference beam, and the doping level of the substrate in the preselected doped region is determined from the phase shift. The doping level measuring system may be used to control a semiconductor fabrication process.

대표청구항 ▼

[ I claim:] [1.] A system for measuring the doping levels of a doped region in a semiconductor substrate, comprising:means for generating an analyzer beam and a reference beam, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and ref

[ I claim:] [1.] A system for measuring the doping levels of a doped region in a semiconductor substrate, comprising:means for generating an analyzer beam and a reference beam, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overlapping;means for focusing the analyzer beam on a preselected doped region of the substrate and for focusing the reference beam on an undoped region of the substrate, the doped region generating a phase shift of the analyzer beam relative to the reference beam corresponding to a level of doping of the doped region of the substrate;means for detecting the phase shift of the analyzer beam relative to the reference beam; andmeans responsive to the detecting means for determining the doping level of the substrate in the preselected doped region.