초록 ▼

A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma

A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

대표청구항 ▼

[ We claim:] [1.] A method of cleaning a gas flow path of a down-stream apparatus, comprising the steps of:introducing a gas including a mixture of hydrogen gas and water vapor into the apparatus, said water vapor serving as an oxygen source;generating plasma of the gas in a plasma generating space

[ We claim:] [1.] A method of cleaning a gas flow path of a down-stream apparatus, comprising the steps of:introducing a gas including a mixture of hydrogen gas and water vapor into the apparatus, said water vapor serving as an oxygen source;generating plasma of the gas in a plasma generating space within said down-stream apparatus, said plasma including oxygen atoms and hydrogen radicals; anddirecting said plasma down-stream along said gas flow path,wherein said hydrogen radicals combine with and remove contaminants in said gas flow path, before placing a material to be processed within said down-stream apparatus, andwherein said gas flow path comprises an inner wall made of silicon oxide.