초록 ▼

An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The inter

An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.

대표청구항 ▼

[ What is claimed is:] [1.] An interconnect system comprising:a silicon substrate;a first dielectric layer formed upon said silicon substrate;a first level of at least two electrically conductive lines formed upon said first dielectric layer;a first region with a low dielectric constant material for

[ What is claimed is:] [1.] An interconnect system comprising:a silicon substrate;a first dielectric layer formed upon said silicon substrate;a first level of at least two electrically conductive lines formed upon said first dielectric layer;a first region with a low dielectric constant material formed between said first level of at least two electrically conductive lines and upon said first level of at least two electrically conductive lines, said low dielectric constant material includes an organic polymer that has a dielectric constant in the range of 1.5-3.5;a first dual layer hard mask formed upon said region with a low dielectric constant material; andsaid organic polymer having a thickness, measured between the first dielectric layer and the first dual layer hard mask, in the range of 8,000 to 14,000 angstroms.