$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method of and apparatus for independently controlling electric parameters of an impedance matching network 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23K-010/00
출원번호 US-0770622 (1996-12-19)
발명자 / 주소
  • Williams Norman
  • Jewett
  • Jr. Russell F.
출원인 / 주소
  • LAM Research Corporation
대리인 / 주소
    Lowe Hauptman Gopstein Gilman & Berner
인용정보 피인용 횟수 : 75  인용 특허 : 10

초록

An arrangement and method for matching a load and a power source, such as an r.f. power source for a vacuum plasma processing chamber, includes a match network coupled between the power source and the load. The match network has at least two controllably variable electrical characteristics. A sensor

대표청구항

[ What is claimed is:] [1.] Apparatus for matching a load to a power source, comprising:a match network coupled between a power source and a load, the match network having at least two controllable variable electrical characteristics;a sensor for sensing at least two electric parameters determined b

이 특허에 인용된 특허 (10)

  1. Lovin Joseph R. (Greer SC), Apparatus and method for radio frequency sealing thermoplastic films together.
  2. Luu Ky T. (Halifax CAX), Automatic matching and tuning network.
  3. Miller Paul A. (Albuquerque NM) Kamon Mattan (Cambridge MA), Control of plasma process by use of harmonic frequency components of voltage and current.
  4. Bel Claude (Maxilly FRX), High frequency heating generator having an improved matching network between a tetrode amplifier and a resonant circuit.
  5. Reese George (Wyoming MI) Spielmaker Richard (Ft. Collins CO) Schatz Douglas (Ft. Collins CO), Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load.
  6. Mahoney Leonard J. (Madison WI), Method and apparatus for plasma surface treatment of the interior of hollow forms.
  7. Seward ; Glen, Method of and apparatus for matching a load circuit to a drive circuit.
  8. Patrick Roger (Santa Clara CA) Bose Frank A. (Wettingen CHX), Power control and delivery in plasma processing equipment.
  9. Williams Norman (Austin TX) Spain James (Austin TX), Radio frequency monitor for semiconductor process control.
  10. Collins Kenneth S. (San Jose CA) Roderick Craig A. (San Jose CA) Trow John R. (Santa Clara CA) Yang Chan-Lon (Los Gatos CA) Wong Jerry Y. (Fremont CA) Marks Jeffrey (San Jose CA) Keswick Peter R. (Ne, Silicon scavenger in an inductively coupled RF plasma reactor.

이 특허를 인용한 특허 (75)

  1. Edmonson, Peter J.; Campbell, Colin K., Adaptive tuning device and method utilizing a surface acoustic wave device for tuning a wireless communication device.
  2. Valcore, Jr., John C.; Lyndaker, Bradford J., Adjustment of power and frequency based on three or more states.
  3. Park, Deukil; Rhew, Choongyop; Park, Daisoung; Kang, Wonmyeong, Apparatus for forming pattern using laser.
  4. Valcore, Jr., John C.; Povolny, Henry S., Arrangement for plasma processing system control based on RF voltage.
  5. Pinks,John R., Automatic matching and tuning unit.
  6. Ashida, Mitsutoshi, Automatic matching unit and plasma processing apparatus.
  7. Howald, Arthur M.; Valcore, Jr., John C., Cable power loss determination for virtual metrology.
  8. Albarede, Luc, Chamber matching for power control mode.
  9. Albarede, Luc, Chamber matching using voltage control mode.
  10. Kumar, Ajay; Grewal, Virinder; Yau, Wai-Fan, Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same.
  11. Kumar, Ajay, Cluster tool and method for process integration in manufacturing of a photomask.
  12. Kumar, Ajay, Cluster tool and method for process integration in manufacturing of a photomask.
  13. Fong, Andrew S.; Valcore, Jr., John C., Computation of statistics for statistical data decimation.
  14. Parsons, Richard, Control of power delivered to a multiple segment inject electrode.
  15. Valcore, Jr., John C.; Lyndaker, Bradford J.; Sato, Arthur, Determining a malfunctioning device in a plasma system.
  16. Valcore, Jr., John C.; Lyndaker, Bradford J., Determining a value of a variable on an RF transmission model.
  17. Mitrovic, Andrej S.; Windhorn, Thomas H.; Johson, Wayne L., Device and method for coupling two circuit components which have different impedances.
  18. Tanaka, Tsutomu; Wolff, Stefan A., Distributed load transmission line matching network.
  19. Valcore, Jr., John C., Dual control modes.
  20. Shannon, Steven C.; Holland, John, Dual frequency RF match.
  21. Marakhtanov, Alexei; Dhindsa, Rajinder; Bise, Ryan; Li, Lumin; Nam, Sang Ki; Rogers, Jim; Hudson, Eric; Delgadino, Gerardo; Bailey, III, Andrew D.; Kellogg, Mike; de la Llera, Anthony, Dual zone temperature control of upper electrodes.
  22. Valcore, Jr., John C.; Lyndaker, Bradford J.; Fong, Andrew S., Edge ramping.
  23. Bhutta, Imran Ahmed, Electronically variable capacitor and RF matching network incorporating same.
  24. Valcore, Jr., John C.; Singh, Harmeet; Povolny, Henry, Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching.
  25. Valcore, Jr., John C.; Singh, Harmeet; Povolny, Henry, Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching.
  26. Harnett,Sean, Fuzzy logic tuning of RF matching network.
  27. Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.
  28. Bhutta, Imran Ahmed, High speed high voltage switching circuit.
  29. Bhutta, Imran, High voltage switching circuit.
  30. Nishimori, Yasuhiro; Omae, Shuji; Mito, Masakatsu; Ishida, Yuji; Itadani, Koji, Impedance matching device provided with reactance-impedance table.
  31. Blackburn, Thomas Joel; Mason, Christopher C., Impedance matching network with termination of secondary RF frequencies.
  32. Valcore, Jr., John C.; Lyndaker, Bradford J., Impedance-based adjustment of power and frequency.
  33. Marakhtanov, Alexei; Chen, Zhigang; Holland, John Patrick, Ion energy control by RF pulse shape.
  34. Saar, David A.; Stine, Robert D.; Hennenhoefer, Earl; Snyder, Richard V., Managed wideband radio frequency distribution system with signal level enabling interface device.
  35. Saar, David A.; Stine, Robert D.; Hennenhoefer, Earl; Snyder, Richard V., Managed wideband radio frequency distribution system with signal level enabling interface device and impedance signature detection.
  36. Mitrovic,Andrej S.; Strang,Eric J.; Sirkis,Murray D.; Quon,Bill H.; Parsons,Richard; Tsukamoto,Yuji, Method and apparatus for improved plasma processing uniformity.
  37. Windhorn,Thomas H, Method and assembly for providing impedance matching network and network assembly.
  38. Shannon, Steven C., Method for testing plasma reactor multi-frequency impedance match networks.
  39. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters.
  40. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure.
  41. Hoffman, Daniel J.; Gold, Ezra Robert, Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters.
  42. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.
  43. Hoffman, Daniel J., Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants.
  44. Hoffman, Daniel J., Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power.
  45. Valcore, Jr., John C.; Lyndaker, Bradford J., Methods and apparatus for controlling plasma in a plasma processing system.
  46. Valcore, Jr., John C.; Lyndaker, Bradford J.; Singh, Harmeet, Methods and apparatus for synchronizing RF pulses in a plasma processing system.
  47. Valcore, Jr., John C., Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool.
  48. Dhindsa, Rajinder; Kellogg, Mike, Plasma processing chamber with flexible symmetric RF return strap.
  49. Gilmore, Jack, Plasma pulse tracking system and method.
  50. Benjamin, Neil, RF generating system with fast loop control.
  51. Bhutta, Imran Ahmed, RF impedance matching network.
  52. Bhutta, Imran Ahmed, RF impedance matching network.
  53. Bhutta, Imran Ahmed, RF impedance matching network.
  54. Bhutta, Imran Ahmed, RF impedance matching network.
  55. Mavretic, Anton, RF impedance matching network.
  56. Mavretic, Anton, RF impedance matching network.
  57. Valcore, Jr., John C.; Rogers, James Hugh; Webb, Nicholas Edward; Muraoka, Peter T., RF impedance model based fault detection.
  58. Valcore, Jr., John C.; Howald, Arthur M., Segmenting a model within a plasma system.
  59. Valcore, Jr., John C., Soft pulsing.
  60. Valcore, Jr., John C.; Lyndaker, Bradford J., State-based adjustment of power and frequency.
  61. Valcore, Jr., John C.; Singh, Harmeet; Lyndaker, Bradford J., Sub-pulsing during a state.
  62. Mavretic, Anton, Switching circuit.
  63. Mavretic, Anton, Switching circuit.
  64. Mavretic, Anton, Switching circuit for RF currents.
  65. Marakhtanov, Alexei; Dhindsa, Rajinder, Systems and methods for controlling a plasma edge region.
  66. Blackburn,Thomas Joel; Mason,Christopher C., Termination of secondary frequencies in RF power delivery.
  67. Valcore, Jr., John C.; Lyndaker, Bradford J., Tuning a parameter associated with plasma impedance.
  68. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine ion energy associated with a plasma system.
  69. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine wafer bias associated with a plasma system.
  70. Edmonson, Peter J.; Campbell, Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
  71. Edmonson, Peter J.; Campbell, Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
  72. Edmonson, Peter J.; Campbell, Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
  73. Edmonson, Peter J.; Campbell, Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
  74. Edmonson, Peter J.; Campbell, Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
  75. Edmonson,Peter J.; Campbell,Colin K., Wireless communication system using surface acoustic wave (SAW) second harmonic techniques.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로