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Apparatus for providing additional latency for synchronously accessed memory 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-008/00
출원번호 US-0971743 (1997-11-17)
발명자 / 주소
  • Jeddeloh Joseph M.
출원인 / 주소
  • Micron Electronics, Inc.
대리인 / 주소
    Park & Vaughan
인용정보 피인용 횟수 : 25  인용 특허 : 5

초록

One embodiment of the present invention provides a memory system that allows more than one cycle of memory latency for accesses to a synchronously accessed memory. In this embodiment, the memory system includes a memory with a clocked interface and a corresponding clock input. It also includes an ou

대표청구항

[ What is claimed is:] [1.] A memory controller, that provides more than one clock cycle of memory latency for accesses to a memory with a synchronous interface, comprising:a processor interface, for coupling to a processor;an input register including a clock input, for storing data to be inputted i

이 특허에 인용된 특허 (5)

  1. Chang Ray (Austin TX) Flannagan Stephen T. (Austin TX) Jones Kenneth W. (Austin TX), Delay locked loop for detecting the phase difference of two signals having different frequencies.
  2. Nagashima Tetsuro (Kawasaki JPX) Kawanishi Toshiharu (Kawasaki JPX) Okutani Shigeaki (Kawasaki JPX) Nomura Osamu (Kawasaki JPX) Iino Takashi (Kawasaki JPX), Information processing apparatus including synchronous storage having backup registers for storing the latest sets of in.
  3. Marquis Steven R. ; Hoffman Scott T., Method and apparatus for generating timing pulses accurately skewed relative to clock.
  4. Matsubara Hiroaki (Tokyo JPX), Read-only memory with few programming signal lines.
  5. Matsumoto Akihiro (Osaka JPX), Semiconductor memory device and control method for the same.

이 특허를 인용한 특허 (25)

  1. Dean Gans ; Eric J. Stave ; Joseph Thomas Pawlowski, Adjustable I/O timing from externally applied voltage.
  2. Perego, Richard; Ware, Fred; Tsern, Ely, Buffered memory having a control bus and dedicated data lines.
  3. Keith Dow, Computer system with dram bus.
  4. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., Controlling DRAM at time DRAM ready to receive command when exiting power down.
  5. MacWilliams Peter D. ; Quiet Duane G., Independent timing compensation of write data path and read data path on a common data bus.
  6. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., Memory device having a power down exit register.
  7. Kim Jae Hyeong,KRX, Memory device with packet command.
  8. Tsern,Ely, Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology.
  9. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  10. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  11. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  12. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  13. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  14. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  15. Shaeffer, Ian; Tsern, Ely; Hampel, Craig, Memory system topologies including a buffer device and an integrated circuit memory device.
  16. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., Method and apparatus for configuring access times of memory devices.
  17. Barth Richard M. ; Tsern Ely K. ; Hampel Craig E. ; Ware Frederick A. ; Bystrom Todd W. ; May Bradley A. ; Davis Paul G., Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain.
  18. Jeddeloh Joseph M., Method for providing additional latency for synchronously accessed memory.
  19. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., Method of operation of a memory device and system including initialization at a first frequency and operation at a second frequency and a power down exit mode.
  20. Fagan, John L.; Bossard, Mark, Selectable delay pulse generator.
  21. Miyanishi Atsushi,JPX ; Yamazaki Akira,JPX, Semiconductor device and method of fabricating the same.
  22. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., System and module including a memory device having a power down mode.
  23. Barth, Richard M.; Tsern, Ely K.; Hampel, Craig E.; Ware, Frederick A.; Bystrom, Todd W.; May, Bradley A.; Davis, Paul G., System for a memory device having a power down mode and method.
  24. Perego, Richard E; Sidiropoulos, Stefanos; Tsern, Ely, System having a controller device, a buffer device and a plurality of memory devices.
  25. Tsern, Ely; Shaeffer, Ian; Hampel, Craig, System including a buffered memory module.
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