초록 ▼

A low light level detection and imaging device including a photon sensing and counting device for image detection that is capable of detecting/imaging low photon flux levels over a wide spectral range using either image tube or solid state readout. The sensing and counting is composed of a detector

A low light level detection and imaging device including a photon sensing and counting device for image detection that is capable of detecting/imaging low photon flux levels over a wide spectral range using either image tube or solid state readout. The sensing and counting is composed of a detector stack having several photoconductive layers, at least one layer of the stack being an amorphous Selenium layer that is capable of high gain avalanche multiplication. The stack further includes an amorphous Silicon layer deposited on the amorphous Selenium layer to absorb infrared and ultraviolet radiation to enhance responsivity in the red and near-IR region, whereas the purpose of the amorphous Selenium layer is to provide high responsivity in the blue region and also to provide avalanche gain or multiplication of the photo generated carriers in both the amorphous Silicon or Selenium layers. Hence, the Selenium avalanching layer 12 provides low noise amplification for carriers injected from the Silicon layer into the Selenium layer.

대표청구항 ▼

[ I claim:] [1.] A photon sensing and counting device for low light level detection and imaging systems comprising a stack of photoconductive layers, said stack including at least one amorphous silicon photoconductive absorber layer to absorb near infrared and ultraviolet radiation to provide enhanc

[ I claim:] [1.] A photon sensing and counting device for low light level detection and imaging systems comprising a stack of photoconductive layers, said stack including at least one amorphous silicon photoconductive absorber layer to absorb near infrared and ultraviolet radiation to provide enhanced sensitivity to red and near infrared radiation for producing photocarriers of wavelength .lambda..sub.1, said at least one amorphous silicon photoconductive layer being deposited on at least one amorphous selenium high gain avalanche photocarrier multiplying layer having enhanced sensitivity to blue radiation for producing photocarriers of wavelength .lambda..sub.2, said at least one amorphous selenium layer providing multiplication of said photocarriers produced in said at least one amorphous silicon and at least one amorphous selenium layer, and output means including means for reading out and counting the photons from said at least one amorphous selenium layer,wherein said amorphous silicon layer produces photocarriers of red and near infrared wavelengths and wherein said amorphous selenium layer is doped with Te and As.